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PDF XP1D873 Data sheet ( Hoja de datos )
| Número de pieza | XP1D873 | |
| Descripción | Silicon N-channel junction FET | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Composite Transistors
XP1D873
Silicon N-channel junction FET
For analog switching
s Features
q Two elements incorporated into one package.
(Drain-coupled FETs)
q Reduction of the mounting area and assembly cost by one half.
q Low-frequency and low-noise J-FET.
2.1±0.1
0.425 1.25±0.1 0.425
15
2
34
Unit: mm
s Basic Part Number of Element
q 2SK1103 × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Rating Gate to drain voltage
of Drain current
element Gate current
Total power dissipation
Overall Channel temperature
Storage temperature
VGDS
ID
IG
PT
Tch
Tstg
–50
30
10
150
150
–55 to +150
Unit
V
mA
mA
mW
˚C
˚C
0.2±0.1
1 : Source (FET1)
2 : Drain (FET1, 2)
3 : Source (FET2)
4 : Gate (FET2)
5 : Gate (FET1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
Marking Symbol: OC
Internal Connection
FET 1
1
5
2
34
FET 2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Drain voltage
Drain current
Gate cutoff current
Gate to source cutoff voltage
Mutual conductance
Drain ON resistance
Common source short-circuit input capacitance
Common source reverse transfer capacitance
Common source short-circuit output capacitance
VGDS
IDSS
IGSS
VGSC
gm
RDS(on)
Ciss
Crss
Coss
IG = –10µA, VDS = 0
VDS = 10V, VGS = 0
VGS = –30V, VDS = 0
VDS = 10V, ID = 10µA
VDS = 10V, ID = 1mA, f = 1kHz
VDS = 10mV, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
VDS = 10V, VGS = 0, f = 1MHz
VDS = 10V, VGS = 0, f = 1MHz
min typ max Unit
–50 V
0.2 6.0 mA
–10 nA
–1.5 –3.5
V
1.8 2.5
mS
300 Ω
7 pF
1.5 pF
1.5 pF
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet XP1D873.PDF ] | |
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