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PDF XP1D874 Data sheet ( Hoja de datos )
| Número de pieza | XP1D874 | |
| Descripción | N-channel junction FET | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Composite Transistors
XP1D874
N-channel junction FET
For low-frequency impedance conversion
For infrared sensor
s Features
q Two elements incorporated into one package.
(Drain-coupled FETs)
q Reduction of the mounting area and assembly cost by one half.
2.1±0.1
0.425 1.25±0.1 0.425
15
2
34
Unit: mm
s Basic Part Number of Element
q 2SK1842 × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Gate to drain voltage
Rating Gate to source voltage
of
element Gate current
Drain current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
VGDO
VGSO
IG
ID
PT
Tj
Tstg
Ratings
–40
–40
10
1
150
150
–55 to +150
Unit
V
V
mA
mA
mW
˚C
˚C
0.2±0.1
1 : Source (FET1)
2 : Drain
3 : Source (FET2)
4 : Gate (FET2)
5 : Gate (FET1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
Marking Symbol: EQ
Internal Connection
FET 1
1
5
2
34
FET 2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Gate to drain voltage
Drain current
Gate cutoff current
Forward transfer admittance
Gate to source cutoff voltage
Common source short-circuit input capacitance
Common source reverse transfer capacitance
Common source short-circuit output capacitance
VGDS
IDSS
IGSS
| YfS |
VGSC
Ciss
Crss
Coss
IG = –10µA, VGS = 0
VDS = 10V, VGS = 0
VGS = –20V, VDS = 0
VDS = 10V, VGS = 0, f = 1kHz
VDS = 10V, ID = 1µA
VDS = 10V, VGS = 0, f = 1MHz
VDS = 10V, VGS = 0, f = 1MHz
VDS = 10V, VGS = 0, f = 1MHz
min typ max Unit
–40 V
30 200 µA
– 0.5 nA
0.05 mS
–1.3 –3.0
V
1.0 pF
0.4 pF
0.4 pF
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet XP1D874.PDF ] | |
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