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PDF XP5501 Data sheet ( Hoja de datos )
| Número de pieza | XP5501 | |
| Descripción | Silicon NPN epitaxial planer transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de XP5501 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Composite Transistors
XP5501
Silicon NPN epitaxial planer transistor
For general amplification
s Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
2.1±0.1
0.425 1.25±0.1 0.425
16
25
34
Unit: mm
s Basic Part Number of Element
q 2SD601A × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of Emitter to base voltage
element
Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
Ratings
60
50
7
100
200
150
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
0.2±0.1
1 : Emitter (Tr1)
2 : Base (Tr1)
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Emitter (Tr2)
6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
Marking Symbol: 5L
Internal Connection
Tr1
1
6
25
34
Tr2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1 Ratio between 2 elements
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
hFE (small/large)*1
VCE(sat)
fT
Cob
IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCB = 20V, IE = 0
VCE = 10V, IB = 0
VCE = 10V, IC = 2mA
VCE = 10V, IC = 2mA
IC = 100mA, IB = 10mA
VCB = 10V, IE = –2mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
60
50
7
160
0.5
typ max Unit
V
V
V
0.1 µA
100 µA
460
0.99
0.1 0.3
V
150 MHz
3.5 pF
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet XP5501.PDF ] | |
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