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부품번호 | Z0103MA 기능 |
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기능 | 4Q Triac | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
Z0103MA
4Q Triac
6 May 2015
Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT54 (TO-92) plastic
package intended for use in applications requiring direct interfacing to logic ICs and low
power gate drivers.
2. Features and benefits
• Direct interfacing to logic level ICs
• Direct interfacing to low power gate drive circuits
• High blocking voltage capability
• Planar passivated for voltage ruggedness and reliability
• Triggering in all four quadrants
• Very sensitive gate in four quadrants
3. Applications
• General purpose low power motor control
• Home appliances
• Industrial process control
• Low power AC Fan controllers
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tlead ≤ 45 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 8A
- - 1A
- - 3 mA
- - 3 mA
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NXP Semiconductors
Z0103MA
4Q Triac
2 .0
Ptot
(W)
1 .6
1 .2
conduction
angle, α
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.967
1.570
1.329
1.110
0 .8
0 .4
α
α
003aac259
α = 180°
120°
9 0°
6 0°
30°
0 .0
0
0.2 0.4 0.6 0.8
1
Fig. 3.
alpha = conduction angle
a = form factor = IT(RMS) / IT(AV)
Total power dissipation as a function of RMS on-state current; maximum values
10
ITSM
(A)
8
1 .2
IT(RMS ) (A)
003aad318
6
4
IT ITSM
2t
1/f
Tj(init) = 25 °C max
0
1
10 102 103
number of cycles
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
Z0103MA
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
4 / 13
4페이지 NXP Semiconductors
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
VT
on-state voltage
IT = 1.4 A; Tj = 25 °C; Fig. 10
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
VD = 600 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
ID
off-state current
VD = 600 V; Tj = 125 °C
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 402 V; Tj = 110 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 12
dVcom/dt
rate of change of
commutating voltage
VD = 400 V; Tj = 110 °C; dIcom/
dt = 0.44 A/ms; IT = 1 A; gate open
circuit
Z0103MA
4Q Triac
Min Typ Max Unit
- - 3 mA
- - 3 mA
- - 3 mA
- - 5 mA
- - 7 mA
- - 15 mA
- - 7 mA
- - 7 mA
- - 7 mA
- 1.3 1.6 V
- - 1V
0.2 - - V
- - 0.5 mA
10 - - V/µs
0.5 - - V/µs
Z0103MA
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
7 / 13
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부품번호 | 상세설명 및 기능 | 제조사 |
Z0103MA | 4Q Triac | NXP Semiconductors |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |