(PDF) ZDM4306N Datasheet - DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS

Número de pieza	ZDM4306N
Descripción	DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS
Fabricantes	Zetex Semiconductors
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No Preview Available ! SM-8 DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS ISSUE 1 - NOVEMBER 1995 ZDM4306N D1 D1 D2 D2 PARTMARKING DETAIL – M4306N G1 S1 G2 S2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Tj:Tstg VALUE 60 2 15 ± 20 -55 to +150 UNIT V A A V °C THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Ptot 2.5 W 3.0 W Derate above 25°C* Any single die “on” Both die “on” equally 20 mW/ °C 24 mW/ °C Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally 50.0 °C/ W 41.6 °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. Note: This data is derived from development material and does not necessarily mean that the device will go into production 3 - 321 1 page

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PDF ZDM4306N Data sheet ( Hoja de datos )