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X86C64PI 데이터시트 PDF




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부품번호 X86C64PI 기능
기능 E2 Micro-Peripheral
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X86C64PI 데이터시트, 핀배열, 회로
Preliminary Information
XZ8®6CM6ic4rocontroller Family Compatible
64K X86C64
E2 Micro-Peripheral
8192 x 8 Bit
FEATURES
CONCURRENT READ WRITE
—Dual Plane Architecture
Isolates Read/Write Functions
Between Planes
Allows Continuous Execution of Code
From One Plane While Writing in the Other
Plane
Multiplexed Address/Data Bus
—Direct Interface to Popular 8-bit
Microcontrollers, e.g. Zilog Z8 Family
High Performance CMOS
—Fast Access Time, 120 ns
—Low Power
60 mA Maximum Active
200 µA Maximum Standby
Software Data Protection
Block Protect Register
—Individually Set Write Lock Out in 1K Blocks
Toggle Bit
—Early End of Write Detection
Page Mode Write
—Allows up to 32 Bytes to be Written in
One Write Cycle
High Reliability
—Endurance: 10,000 Write Cycle
—Data Retention: 100 Years
DESCRIPTION
The X86C64 is an 8K x 8 E2PROM fabricated with
advanced CMOS Textured Poly Floating Gate Technol-
ogy. The X86C64 features a Multiplexed Address and
Data bus allowing direct interface to a variety of popular
single-chip microcontrollers operating in expanded mul-
tiplexed mode without the need for additional interface
circuitry.
The X86C64 is internally configured as two indepen-
dent 4K x 8 memory arrays. This feature provides the
ability to perform nonvolatile memory updates in one
array and continue operation out of code stored in the
other array; effectively eliminating the need for an aux-
iliary memory device for code storage.
To write to the X86C64, a three byte command
sequence must precede the byte(s) being written. The
X86C64 also provides a second generation software
data protection scheme called Block Protect. Block
Protect can provide write lockout of the entire device or
selected 1K blocks. There are eight, 1K x 8 blocks that
can be write protected individually in any combination
required by the user. Block Protect, in addition to Write
Control input, allows the different segments of the
memory to have varying degrees of alterability in nor-
mal system operation.
FUNCTIONAL DIAGRAM
CE
R/W
DS
SEL
A8–A11
AS
CONTROL
LOGIC
LX
AD
TE
CC
HO
ED
SE
WC
A12
SOFTWARE
DATA
PROTECT
A12
1K BYTES A12 1K BYTES
M
1K BYTES
1K BYTES
U
1K BYTES X 1K BYTES
1K BYTES
1K BYTES
Y DECODE
Z8® is a registered trademark of Zilog Corporation
CONCURRENT READ WRITEis a trademark of Xicor, Inc.
© Xicor, 1991 Patents Pending
3819-2.1 7/29/96 T0/C1/D1 SH
I/O & ADDRESS LATCHES AND BUFFERS
A/D0–A/D7
3819 FHD F02
1 Characteristics subject to change without notice




X86C64PI pdf, 반도체, 판매, 대치품
X86C64
MODE SELECTION
CE DS
VSS X
VIL X
VIH VIL
VIH
R/W
X
X
VIH
VIL
Mode
Standby
Standby
Read
Write
I/O
High Z
High Z
DOUT
DIN
Power
Standby (CMOS)
Standby (TTL)
Active
Active
3819 PGM T08
PAGE WRITE OPERATION
Regardless of the microcontroller employed, the X86C64
supports page mode write operations. This allows the
microcontroller to write from one to thirty-two bytes of
data to the X86C64. Each individual write within a page
write operation must conform to the byte write timing
requirements. The falling edge of DS starts a timer
delaying the internal programming cycle 100 µs. There-
fore, each successive write operation must begin within
100 µs of the last byte written. The following waveforms
illustrate the sequence and timing requirements.
Page Write Timing Sequence for DS Controlled Operation
OPERATION
CE
AS
A/D0–A/D7
A8–A12
DS
BYTE 0
AIN DIN
A12=n
BYTE 1
AIN DIN
A12=n
BYTE 2
LAST BYTE
READ (1)(2)
AIN DIN
A12=n
AIN DIN
A12=n
AIN DIN
A12=x
AFTER tWC READY FOR
NEXT WRITE OPERATION
AIN
ADDR
AIN
Next Address
R/W
tBLC
tWC
381398F1H9DFFH07D F07
Notes: (1) For each successive write within a page write cycle A5–A12 must be the same.
(2) Although it is not illustrated, the microcontroller may interleave read operations between the individual byte writes within the page
write operation. Two responses are possible.
a. Reading from the same plane being written (A12 of Read = A12 of Write) is effectively a Toggle Bit Polling operation.
b. Reading from the opposite plane being written (A12 of Read A12 of Write) true data will be returned, facilitating the use of a
single memory component as both program and data store.
4

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X86C64PI 전자부품, 판매, 대치품
X86C64
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias
X86C64 ........................................ –10°C to +85°C
X86C64I ..................................... –65°C to +135°C
Storage Temperature ....................... –65°C to +150°C
Voltage on any Pin with
Respect to VSS ............................... –1.0V to +7V
D.C. Output Current ............................................ 5 mA
Lead Temperature
(Soldering, 10 Seconds) ............................. 300°C
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and the functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reli-
ability.
RECOMMENDED OPERATING CONDITIONS
Temperature
Min.
Max.
Supply Voltage
Limits
Commercial
0°C
70°C
X86C64
5V ± 10%
Industrial
–40°C
+85°C
3819 PGM T03
Military
–55°C
+125°C
3819 PGM T02
D.C. OPERATING CHARACTERISTICS (Over recommended operating conditions unless otherwise specified.)
Symbol
Parameter
Limits
Min.
Max.
Units
Test Conditions
ICC VCC Current (Active)
60 mA
ISB1(CMOS) VCC Current (Standby)
500 µA
ISB2(TTL) VCC Current (Standby)
6 mA
ILI
ILO
VlL(1)
VIH(1)
VOL
VOH
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
10 µA
10 µA
–1.0 0.8
V
2.0 VCC + 0.5 V
0.4 V
2.4 V
CAPACITANCE TA = 25°C, F = 1.0MHZ, VCC = 5V
Symbol
Test
CI/O(2)
CIN(2)
Input/Output Capacitance
Input Capacitance
Max.
10
6
POWER-UP TIMING
CE = VIL, All I/O’s = Open,
Other Inputs = VCC, AS = VIL
CE = VSS, All I/O’s = Open,Other
Inputs = VCC – 0.3V
CE = VIH, All I/O’s = Open, Other
Inputs = VIH
VIN = GND to VCC
VOUT = GND to VCC, DS = VIH
IOL = 2.1 mA
IOH = –400 µA
3819 PGM T04
Units
pF
pF
Conditions
VI/O = 0V
VIN = 0V
3819 PGM T05
Symbol
tPUR(2)
tPUW(2)
Parameter
Power-Up to Read
Power-Up to Write
Notes: (1) VIL MIN and VIH MAX are for reference only and are not tested.
(2) This parameter is periodically sampled and not 100% tested.
Max.
1
5
Units
ms
ms
3819 PGM T06
7

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