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X20C04P 데이터시트 PDF




Xicor에서 제조한 전자 부품 X20C04P은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 X20C04P 자료 제공

부품번호 X20C04P 기능
기능 Nonvolatile Static RAM
제조업체 Xicor
로고 Xicor 로고


X20C04P 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



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X20C04P 데이터시트, 핀배열, 회로
X20C04
4K
X20C04
Nonvolatile Static RAM
512 x 8 Bit
FEATURES
High Reliability
—Endurance: 1,000,000 Nonvolatile Store
Operations
—Retention: 100 Years Minimum
Power-on Recall
—E2PROM Data Automatically Recalled Into
SRAM Upon Power-up
Lock Out Inadvertent Store Operations
Low Power CMOS
—Standby: 250µA
Infinite E2PROM Array Recall, and RAM Read
and Write Cycles
Compatible with X2004
DESCRIPTION
The Xicor X20C04 is a 512 x 8 NOVRAM featuring a
static RAM overlaid bit-for-bit with a nonvolatile electri-
cally erasable PROM (E2PROM). The X20C04 is fabri-
cated with advanced CMOS floating gate technology to
achieve low power and wide power-supply margin. The
X20C04 features the JEDEC approved pinout for byte-
wide memories, compatible with industry standard RAMs,
ROMs, EPROMs, and E2PROMs.
The NOVRAM design allows data to be easily trans-
ferred from RAM to E2PROM (store) and E2PROM to
RAM (recall). The store operation is completed in 5ms or
less and the recall operation is completed in 5µs or less.
Xicor NOVRAMS are designed for unlimited write
operations to RAM, either from the host or recalls from
E2PROM, and a minimum 1,000,000 store operations to
the E2PROM. Data retention is specified to be greater
than 100 years.
PIN CONFIGURATION
PLASTIC
CERDIP
NE
NC
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1 28
2 27
3 26
4 25
5 24
6 23
7 22
8 X20C04 21
9 20
10 19
11 18
12 17
13 16
14 15
VCC
WE
NC
A8
NC
NC
OE
NC
CE
I/O7
I/O6
I/O5
I/O4
I/O3
3825 FHD F02
LCC
PLCC
4 3 2 1 32 31 30
A6 5
29 A8
A5 6
28 NC
A4 7
27 NC
A3 8
A2 9
X20C04
(TOP VIEW)
26 NC
25 OE
A1 10
24 NC
A0 11
23 CE
NC 12
22 I/O7
I/O0 13
21 I/O6
14 15 16 17 18 19 20
3825 FHD F03
©Xicor, Inc. 1992, 1995, 1996 Patents Pending
3825-2.8 7/31/97 T4/C0/D0 SH
1 Characteristics subject to change without notice




X20C04P pdf, 반도체, 판매, 대치품
X20C04
ABSOLUTE MAXIMUM RATINGS*
Temperature under Bias .................. –65°C to +135°C
Storage Temperature ....................... –65°C to +150°C
Voltage on any Pin with
Respect to VSS ....................................... –1V to +7V
D.C. Output Current ........................................... 10mA
Lead Temperature (Soldering, 10 seconds) ..... 300°C
RECOMMENDED OPERATING CONDITIONS
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and the functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability.
Temperature
Min.
Max.
Commercial
Industrial
Military
0°C
–40°C
–55°C
+70°C
+85°C
+125°C
3825 PGM T02.1
Supply Voltage
X20C04
Limits
5V ±10%
3825 PGM T03
D.C. OPERATING CHARACTERISTICS (Over recommended operating conditions unless otherwise specified.)
Symbol
Parameter
lCC1 VCC Current (Active)
ICC2
ISB1
ISB2
ILI
ILO
VIL(1)
VIH(1)
VOL
VOH
VCC Current During Store
VCC Standby Current
(TTL Input)
VCC Standby Current
(CMOS Input)
Input Leakage Current
Output Leakage Current
Input LOW Voltage
Input HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Min.
–1
2
2.4
Limits
Max.
100
Units
mA
10 mA
10 mA
250 µA
10
10
0.8
VCC + 0.5
0.4
µA
µA
V
V
V
V
Test Conditions
NE = WE = VIH, CE = OE = VIL
Address Inputs = 0.4V/2.4V levels
@ f = 5MHz. All I/Os = Open
All Inputs = VIH
All I/Os = Open
CE = VIH
All Other Inputs = VIH, All I/Os = Open
All Inputs = VCC – 0.3V
All I/Os = Open
VIN = VSS to VCC
VOUT = VSS to VCC, CE = VIH
IOL = 2.1mA
IOH = –400µA
3825 PGM T04.3
POWER-UP TIMING
Symbol
tPUR(2)
tPUW(2)
Parameter
Power-Up to RAM Operation
Power-Up to Nonvolatile Operation
Max.
100
5
Units
µs
ms
3825 PGM T05
CAPACITANCE TA = +25°C, F = 1MHz, VCC = 5V.
Symbol
Test
CI/O(2)
CIN(2)
Input/Output Capacitance
Input Capacitance
Notes: (1) VIL min. and VIH max. are for reference only and are not tested.
(2) This parameter is periodically sampled and not 100% tested.
Max.
10
6
Units
pF
pF
Conditions
VI/O = 0V
VIN = 0V
3825 PGM T06.1
4

4페이지










X20C04P 전자부품, 판매, 대치품
X20C04
Write Cycle Limits
Symbol
tWC
tCW
tAS
tWP
tWR
tDW
tDH
tWZ(4)
tOW(4)
tOZ(4)
Parameter
Write Cycle Time
Chip Enable to End of Write Input
Address Setup Time
Write Pulse Width
Write Recovery Time
Data Setup to End of Write
Data Hold Time
Write Enable to Output in High Z
Output Active from End of Write
Output Enable to Output in High Z
X20C04-15 X20C04-20 X20C04-25 X20C04
Min. Max. Min. Max. Min. Max. Min. Max. Units
150 200 250 300
ns
150 200 250 300
ns
0 0 0 0 ns
100 120 150 200
ns
0 0 0 0 ns
100 120 150 200
ns
0 0 0 0 ns
80 100 100 100 ns
5 5 5 5 ns
80 100 100 100 ns
3825 PGM T11
WE Controlled Write Cycle
ADDRESS
tWC
OE
CE
WE
DATA OUT
DATA IN
tCW
tAS tWP
tWR
tOZ tOW
tDW
DATA VALID
tDH
Note: (4) tWZ, tOW, and tOZ are periodically sampled and not 100% tested.
3825 FHD F06
7

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