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X20C16JM-55 데이터시트 PDF




Xicor에서 제조한 전자 부품 X20C16JM-55은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 X20C16JM-55 자료 제공

부품번호 X20C16JM-55 기능
기능 High Speed AUTOSTORE NOVRAM
제조업체 Xicor
로고 Xicor 로고


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X20C16JM-55 데이터시트, 핀배열, 회로
APPLICATION NOTE
AVA I L A B L E
X20C16 AN56
16K X20C16
High Speed AUTOSTORE™ NOVRAM
2K x 8 Bit
FEATURES
Fast Access Time: 35ns, 45ns, 55ns
High Reliability
—Endurance: 1,000,000 Nonvolatile Store
Operations
—Retention: 100 Years Minimum
AUTOSTORE™ NOVRAM
—Automatically Stores RAM Data Into the
E2PROM Array When VCC Low Threshold is
Detected
—User Enabled Option
—Open Drain AUTOSTORE Status Output Pin
Power-on Recall
—E2PROM Data Automatically Recalled Into
RAM Upon Power-up
Software Data Protection
—Locks Out Inadvertent Store Operations
Low Power CMOS
—Standby: 250µA
Infinite E2PROM Array Recall, and RAM Read
and Write Cycles
PIN CONFIGURATION
PLASTIC
CERDIP
NE
NC
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1 28 VCC
2 27 WE
3 26 AS
4 25 A8
5 24 A9
6 23 NC
7 22
8 X20C16 21
9 20
10 19
11 18
12 17
13 16
14 15
OE
A10
CE
NC
OE
I/O7
I/O6
A9
A8
AS
I/O5 WE
I/O4
I/O3
VCC
NE
3826 FHD F02
NC
3826 FHD F15.1
A7
A6
A5
A4
A3
SOIC
1 28
2 27
3 26
4 25
5 24
6 23
7 22
X20C16
8 21
9 20
10 19
11 18
12 17
13 16
14 15
AUTOSTORE™ NOVRAM is a trademark of Xicor, Inc.
©Xicor, Inc. 1991, 1995, 1996 Patents Pending
3826-2.9 7/31/97 T4/C0/D0 SH
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
VSS
I/O2
I/O1
I/O0
A0
A1
A2
DESCRIPTION
The Xicor X20C16 is a 2K x 8 NOVRAM featuring a high-
speed static RAM overlaid bit-for-bit with a nonvolatile
electrically erasable PROM (E2PROM) and the
AUTOSTORE feature which automatically saves the
RAM contents to E2PROM at power-down. The X20C16
is fabricated with advanced CMOS floating gate technol-
ogy to achieve high speed with low power and wide
power-supply margin. The X20C16 features a compat-
ible JEDEC approved pinout for byte-wide memories,
for industry standard RAMs, ROMs, EPROMs, and
E2PROMs.
The NOVRAM design allows data to be easily trans-
ferred from RAM to E2PROM (store) and E2PROM to
RAM (recall). The store operation is completed in 5ms or
less and the recall operation is completed in 10µs or
less. An automatic array recall operation reloads the
contents of the E2PROM into RAM upon power-up.
Xicor NOVRAMS are designed for unlimited write
operations to RAM, either from the host or recalls from
E2PROM, and a minimum 1,000,000 store operations to
the E2PROM. Data retention is specified to be greater
than 100 years.
TSOP
LCC
PLCC
X20C16
4 3 2 1 32 31 30
A6 5
29 A8
A5 6
28 A9
A4 7
27 NC
A3 8
A2 9
A1 10
X20C16
(TOP VIEW)
26 NC
25 OE
24 A10
A0 11
23 CE
3826 ILL F17.2
NC
I/O0
12 22
13 21
14 15 16 17 18 19 20
I/O7
I/O6
3826 FHD F03
Characteristics subject to change without notice
1




X20C16JM-55 pdf, 반도체, 판매, 대치품
X20C16
ABSOLUTE MAXIMUM RATINGS*
Temperature under Bias .................. –65°C to +135°C
Storage Temperature ....................... –65°C to +150°C
Voltage on any Pin with
Respect to VSS ....................................... –1V to +7V
D.C. Output Current ........................................... 10mA
Lead Temperature (Soldering, 10 seconds)...... 300°C
RECOMMENDED OPERATING CONDITIONS
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and the functional operation of
the device at these or any conditions other than those
indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability.
Temperature
Min.
Max.
Commercial
Industrial
0°C
–40°C
+70°C
+85°C
Supply Voltage
Limits
Military
–55°C
+125°C
X20C16
5V ±10%
3826 PGM T02.1
3826 PGM T03.1
D.C. OPERATING CHARACTERISTICS (Over recommended operating conditions unless otherwise specified.)
Symbol
Parameter
lCC1 VCC Current (Active)
Min.
Limits
Max.
100
Units
mA
ICC2
ICC3(2)
VCC Current During Store
VCC Current During
AUTOSTORE
5 mA
2.5 mA
ISB1 VCC Standby Current
(TTL Input)
10 mA
ISB2 VCC Standby Current
(CMOS Input)
250 µA
ILI
ILO
VIL(1)
VIH(1)
VOL
VOLAS
VOH
Input Leakage Current
Output Leakage Current
Input LOW Voltage
Input HIGH Voltage
Output LOW Voltage
AUTOSTORE Output
Output HIGH Voltage
10 µA
10 µA
–1 0.8
V
2 VCC + 0.5 V
0.4 V
0.4 V
2.4 V
POWER-UP TIMING
Test Conditions
NE = WE = VIH, CE = OE = VIL
Address Inputs = 0.4V/2.4V Levels
@ f = 20MHz All I/Os = Open
All Inputs = VIH
All I/Os = Open
CE = VIH, All Other Inputs = VIH
All I/Os = Open
All Inputs = VCC – 0.3V
All I/Os = Open
VIN = VSS to VCC
VOUT = VSS to VCC, CE = VIH
IOL = 4mA
IOLAS = 1mA
IOH = –4mA
3826 PGM T04.3
Symbol
Parameter
Max.
Units
tPUR(2)
tPUW(2)
Power-Up to RAM Operation
Power-Up to Nonvolatile Operation
CAPACITANCE TA = +25°C, f = 1MHz, VCC = 5V.
Symbol
Test
Max.
100
5
Units
µs
ms
3826 PGM T05
Conditions
CI/O(2)
CIN(2)
Input/Output Capacitance
Input Capacitance
Notes: (1) VIL min. and VIH max. are for reference only and are not tested.
(2) This parameter is periodically sampled and not 100% tested.
10
6
pF VI/O = 0V
pF VIN = 0V
3826 PGM T06.1
4

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X20C16JM-55 전자부품, 판매, 대치품
X20C16
Write Cycle Limits
Symbol
tWC
tCW
tAS
tWP
tWR
tDW
tDH
tWZ(4)
tOW(4)
tOZ(4)
Parameter
Write Cycle Time
Chip Enable to End of Write Input
Address Setup Time
Write Pulse Width
Write Recovery Time
Data Setup to End of Write
Data Hold Time
Write Enable to Output in High Z
Output Active from End of Write
Output Enable to Output in High Z
X20C16-35
Min. Max.
35
30
0
30
0
15
3
15
5
15
X20C16-45
Min. Max.
45
35
0
35
0
20
3
20
5
20
X20C16-55
Min. Max. Units
55 ns
40 ns
0 ns
40 ns
0 ns
25 ns
3 ns
25 ns
5 ns
25 ns
3826 PGM T11
WE Controlled Write Cycle
ADDRESS
tWC
OE
CE
WE
DATA OUT
DATA IN
tCW
tAS tWP
tWR
tOZ tOW
tDW
DATA VALID
tDH
3826 FHD F06
Note: (4) tWZ, tOW, tOZ are periodically sampled and not 100% tested.
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부품번호상세설명 및 기능제조사
X20C16JM-55

High Speed AUTOSTORE NOVRAM

Xicor
Xicor

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