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X25020P-3 데이터시트 PDF




Xicor에서 제조한 전자 부품 X25020P-3은 전자 산업 및 응용 분야에서
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부품번호 X25020P-3 기능
기능 SPI Serial E2PROM with Block LockTM Protection
제조업체 Xicor
로고 Xicor 로고


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X25020P-3 데이터시트, 핀배열, 회로
APPLICATION NOTES
AVA I L A B L E
X25020AN9 • AN18 • AN31 • AN37 • AN40
2K
X25020
256 x 8 Bit
SPI Serial E2PROM with Block LockTM Protection
FEATURES
1MHz Clock Rate
SPI Modes (0,0 & 1,1)
256 X 8 Bits
—4 Byte Page Mode
Low Power CMOS
—10µA Standby Current
—3mA Active Write Current
2.7V To 5.5V Power Supply
Block Lock Protection
—Protect 1/4, 1/2 or all of E2PROM Array
Built-in Inadvertent Write Protection
—Power-Up/Power-Down protection circuitry
—Write Latch
—Write Protect Pin
Self-Timed Write Cycle
—5ms Write Cycle Time (Typical)
High Reliability
—Endurance: 100,000 cycles per byte
—Data Retention: 100 Years
—ESD protection: 2000V on all pins
8-Lead PDlP Package
8-Lead SOIC Package
DESCRIPTION
The X25020 is a CMOS 2048-bit serial E2PROM, inter-
nally organized as 256 x 8. The X25020 features a serial
interface and software protocol allowing operation on a
simple three-wire bus. The bus signals are a clock input
(SCK) plus separate data in (SI) and data out (SO) lines.
Access to the device is controlled through a chip select
(CS) input, allowing any number of devices to share the
same bus.
The X25020 also features two additional inputs that
provide the end user with added flexibility. By asserting
the HOLD input, the X25020 will ignore transitions on its
inputs, thus allowing the host to service higher priority
interrupts. The WP input can be used as a hardwire input
to the X25020 disabling all write attempts, thus providing
a mechanism for limiting end user capability of altering
the memory.
The X25020 utilizes Xicor’s proprietary Direct Write™
cell, providing a minimum endurance of 100,000 cycles
per byte and a minimum data retention of 100 years.
FUNCTIONAL DIAGRAM
STATUS
REGISTER
SO
SI
SCK
CS
HOLD
COMMAND
DECODE
AND
CONTROL
LOGIC
WRITE
PROTECT
LOGIC
WRITE
CONTROL
AND
WP
TIMING
LOGIC
Direct Writeand Block LockProtection is a trademark of Xicor, Inc.
©Xicor, Inc. 1994, 1995, 1996 Patents Pending
3834-1.8 6/10/96 T3/C1/D0 NS
1
X DECODE
LOGIC
16
16
32
256 BYTE
ARRAY
16 X 32
16 X 32
32 X 32
48
Y DECODE
DATA REGISTER
3834 FHD F01
Characteristics subject to change without notice




X25020P-3 pdf, 반도체, 판매, 대치품
X25020
Clock and Data Timing
Data input on the SI line is latched on the rising edge of
SCK. Data is output on the SO line by the falling edge of
SCK.
Read Sequence
When reading from the E2PROM memory array, CS is
first pulled LOW to select the device. The 8-bit READ
instruction is transmitted to the X25020, followed by the
8-bit address. After the READ opcode and address are
sent, the data stored in the memory at the selected
address is shifted out on the SO line. The data stored
in memory at the next address can be read sequentially
by continuing to provide clock pulses. The address is
automatically incremented to the next higher address
after each byte of data is shifted out. When the highest
address is reached ($FF) the address counter rolls
over to address $00 allowing the read cycle to be
continued indefinitely. The read operation is termi-
nated by taking CS HIGH. Refer to the read E2PROM
array operation sequence illustrated in Figure 1.
To read the status register CS line is first pulled LOW
to select the device followed by the 8-bit RDSR instruc-
tion. After the read status register opcode is sent, the
contents of the status register are shifted out on the SO
line. Figure 2 illustrates the read status register se-
quence.
Write Sequence
Prior to any attempt to write data into the X25020 the
“write enable” latch must first be set by issuing the
WREN instruction (See Figure 3). CS is first taken LOW,
then the WREN instruction is clocked into the X25020.
After all eight bits of the instruction are transmitted, CS
must then be taken HIGH. If the user continues the write
operation without taking CS HIGH after issuing the
WREN instruction, the write operation will be ignored.
To write data to the E2PROM memory array, the user
issues the WRITE instruction, followed by the address
and then the data to be written. This is minimally a thirty-
two clock operation. CS must go LOW and remain LOW
for the duration of the operation. The host may continue
to write up to 4 bytes of data to the X25020. The only
restriction is that the 4 bytes must reside on the same
page. If the address counter reaches the end of the page
and the clock continues, the counter will “roll over” to the
first address of the page and overwrite any data that may
have been written.
For the write operation (byte or page write) to be
completed, CS can only be brought HIGH after bit 0 of
data byte N is clocked in. If it is brought HIGH at any other
time the write operation will not be completed. Refer to
Figures 4 and 5 below for a detailed illustration of the
write sequences and time frames in which CS going
HIGH are valid.
To write to the status register, the WRSR instruction is
followed by the data to be written. Data bits 0, 1, 4, 5, 6
and 7 must be “0”. Figure 6 illustrates this sequence.
While the write is in progress following a status register
or E2PROM write sequence, the status register may be
read to check the WIP bit. During this time the WIP bit will
be HIGH.
Hold Operation
The HOLD input should be HIGH (at VIH) under normal
operation. If a data transfer is to be interrupted HOLD
can be pulled LOW to suspend the transfer until it can be
resumed. The only restriction is the SCK input must be
LOW when HOLD is first pulled LOW and SCK must also
be LOW when HOLD is released.
The HOLD input may be tied HIGH either directly to VCC
or tied to VCC through a resistor.
4

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X25020P-3 전자부품, 판매, 대치품
X25020
Figure 5. Page Write Operation Sequence
CS
SCK
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
INSTRUCTION
BYTE ADDRESS
DATA BYTE 1
SI 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
CS
SCK
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
DATA BYTE 2
DATA BYTE 3
DATA BYTE 4
SI 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Figure 6. Write Status Register Operation Sequence
CS
SCK
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
INSTRUCTION
DATA BYTE
SI 7 6 5 4 3 2 1 0
3834 FHD F07.1
HIGH IMPEDANCE
SO
3834 ILL F15.1
7

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