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Datasheet P687-02 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | P687-02 | CdS photoconductive cell VISIBLE DETECTOR
CdS photoconductive cell
Resin coating type (5R type)
Standard type designed for general-purpose, wide application
CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar res |  Hamamatsu Corporation | data |
P68 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P6803HVG | Dual N-Channel Enhancement Mode MOSFET P6803HVG
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 58mΩ @VGS = 10V
ID 4.5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuou  UNIKC mosfet | | |
| 2 | P687-02 | CdS photoconductive cell VISIBLE DETECTOR
CdS photoconductive cell
Resin coating type (5R type)
Standard type designed for general-purpose, wide application
CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar res Hamamatsu Corporation data | |
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