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Datasheet P6FMBJ18-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
P6F Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P6F5 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | P6F50HP2 | Power MOSFET, Transistor P6F50HP2
PowerMOSFET
■外観図 OUTLINE Package：FTO-220AG（3pin）
Unit：mm
500V6A
特長
煙高耐圧 煙低オン抵抗 煙高速スイッチング 煙高アバランシェ耐量、高 di/dt耐量
Feature
煙 HighVoltage 煙 LowRON 煙 FastSwitching 煙 HighAvalanchedurability,Highdi/dtdu  SHINDENGEN mosfet | | |
| 3 | P6F6 | Diode, Rectifier American Microsemiconductor diode | | |
| 4 | P6F7 | Diode, Rectifier American Microsemiconductor diode | | |
| 5 | P6FE25VX5K | Power MOSFET, Transistor 6E255
00 00
(2015.12)
Typical Output Characteristics
Typical Output Characteristics
Static Drain-Source On-state Resistance vs Drain Current
Static Drain-Source On-state Resistance vs Case Temperature Gate Threshold Voltage vs Case emperature Safe Operating Area
Transient Thermal Impedance
Cap SHINDENGEN mosfet | | |
| 6 | P6FMBJ | GPP TRANSIENT VOLTAGE SUPPRESSOR (600 WATT PEAK POWER 1.0 WATT STEADY STATE) RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
TVS P6FMBJ SERIES
GPP TRANSIENT VOLTAGE SUPPRESSOR
600 WATT PEAK POWER 1.0 WATT STEADY STATE
FEATURES
* * * * * * Plastic package has underwriters laboratory Glass passivated chip construction 600 watt surage capability at 1ms Excellent clamping capabi  Rectron Semiconductor tvs-diode | | |
| 7 | P6FMBJ10 | GPP TRANSIENT VOLTAGE SUPPRESSOR (600 WATT PEAK POWER 1.0 WATT STEADY STATE) RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
TVS P6FMBJ SERIES
GPP TRANSIENT VOLTAGE SUPPRESSOR
600 WATT PEAK POWER 1.0 WATT STEADY STATE
FEATURES
* * * * * * Plastic package has underwriters laboratory Glass passivated chip construction 600 watt surage capability at 1ms Excellent clamping capabi Rectron Semiconductor tvs-diode | |
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| Número de pieza | Descripción | Fabricantes | |
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