Datasheet.kr   

X68257JM 데이터시트 PDF




Xicor에서 제조한 전자 부품 X68257JM은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 X68257JM 자료 제공

부품번호 X68257JM 기능
기능 E2 Micro-Peripheral
제조업체 Xicor
로고 Xicor 로고


X68257JM 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 14 페이지수

미리보기를 사용할 수 없습니다

X68257JM 데이터시트, 핀배열, 회로
6X86X8X25M7icrocontroller Family Compatible
256K
X68257
32,768 x 8 Bit
E2 Micro-Peripheral
FEATURES
• Multiplexed Address/Data Bus
—Direct Interface to Popular 68HC11 Family
• High Performance CMOS
—Fast Access Time, 120ns
—Low Power
—60mA Active Maximum
—500µA Standby Maximum
• Software Data Protection
• Toggle Bit Polling
—Early End of Write Detection
• Page Mode Write
—Allows up to 128 Bytes to be Written in
One Write Cycle
• High Reliability
—Endurance: 10,000 Write Cycle
—Data Retention: 100 Years
• 28-Lead PDIP Package
• 28-Lead SOIC Package
• 32-Lead PLCC Package
DESCRIPTION
The X68257 is an 32K x 8 E2PROM fabricated with
advanced CMOS Textured Poly Floating Gate Technol-
ogy. The X68257 features a multiplexed address and
data bus allowing direct interface to a variety of popular
single-chip microcontrollers operating in expanded mul-
tiplexed mode without the need for additional interface
circuitry.
FUNCTIONAL DIAGRAM
CE, CE
R/W
E
SEL
A8–A14
AS
CONTROL
LOGIC
LX
AD
TE
CC
HO
ED
SE
SOFTWARE
DATA
PROTECT
32K x 8
E2PROM
Y DECODE
I/O & ADDRESS LATCHES AND BUFFERS
A/D0–A/D7
6539 ILL F02.2
© Xicor, Inc. 1994, 1995, 1996 Patents Pending
6539-1.7 9/16/96 T0/C1/D2 SH
1
Characteristics subject to change without notice




X68257JM pdf, 반도체, 판매, 대치품
X68257
MODE SELECTION
CE E R/W Mode I/O
Power
VSS
LOW
HIGH
HIGH
X
X
HIGH
X
X
HIGH
LOW
Standby
Standby
Read
Write
High Z
High Z
DOUT
DIN
Standby (CMOS)
Standby (TTL)
Active
Active
6539 PGM T02.2
PAGE WRITE OPERATION
Regardless of the microcontroller employed, the X68257
supports page mode write operations. This allows the
microcontroller to write from 1 to 128 bytes of data to the
X68257. Each individual write within a page write opera-
tion must conform to the byte write timing requirements.
The rising edge of E starts a timer delaying the internal
programming cycle 100µs. Therefore, each successive
write operation must begin within 100µs of the last byte
written. The following waveforms illustrate the sequence
and timing requirements.
Page Write Timing Sequence for E Controlled Operation
OPERATION
CE
AS
A/D0–A/D7
A8–A14
E
BYTE 0
AIN DIN
An
BYTE 1
AIN DIN
An
BYTE 2
LAST BYTE
READ (1)(2)
AIN DIN
An
AIN DIN
An
AIN DIN
An
AFTER tWC READY FOR
NEXT WRITE OPERATION
AIN
ADDR
AIN
Next Address
R/W
tBLC
Note: (1) For each successive write within a page write cycle A7–A14 must be the same.
tWC
6539 FHD F07.1
4

4페이지










X68257JM 전자부품, 판매, 대치품
X68257
ABSOLUTE MAXIMUM RATINGS*
Temperature under Bias .................. –65°C to +135°C
Storage Temperature ....................... –65°C to +150°C
Voltage on any Pin with
Respect to VSS .................................. –1V to +7V
D.C. Output Current ............................................. 5mA
Lead Temperature
(Soldering, 10 seconds) .............................. 300°C
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and the functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reli-
ability.
RECOMMENDED OPERATING CONDITIONS
Temperature
Min.
Max.
Supply Voltage
Limits
Commercial
0°C
+70°C
X68257
5V ±10%
Industrial
–40°C
+85°C
6539 PGM T04.1
Military
–55°C
+125°C
6539 PGM T03.1
D.C. OPERATING CHARACTERISTICS (Over recommended operating conditions unless otherwise specified.)
Symbol
Parameter
Limits
Min.
Max.
Units
Test Conditions
ICC VCC Current (Active)
ISB1(CMOS) VCC Current (Standby)
ISB2(TTL) VCC Current (Standby)
ILI
ILO
VlL(1)
VIH(1)
VOL
VOH
Input Leakage Current
Output Leakage Current
Input LOW Voltage
Input HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
–1
2
2.4
CAPACITANCE TA = +25°C, f = 1MHz, VCC = 5V
Symbol
Test
60 mA
500 µA
6 mA
10
10
0.8
VCC + 0.5
0.4
µA
µA
V
V
V
V
Max.
CE = VIL, All I/O’s = Open,
Other Inputs = VCC, AS = VIH
CE = VSS, All I/O’s = Open,Other
Inputs = VCC – 0.3V, AS = VSS
CE = VIH, All I/O’s = Open, Other
Inputs = VIH, AS = VIL
VIN = VSS to VCC
VOUT = VSS to VCC, E = VIL
IOL = 2.1mA
IOH = –400µA
6539 PGM T05.1
Units
Conditions
CI/O(2)
CIN(2)
POWER-UP TIMING
Input/Output Capacitance
Input Capacitance
10 pF
6 pF
VI/O = 0V
VIN = 0V
6539 PGM T06
Symbol
Parameter
Max.
Units
tPUR(2)
tPUW(2)
Power-Up to Read
Power-Up to Write
Notes: (1) VIL min. and VIH max. are for reference only and are not tested.
(2) This parameter is periodically sampled and not 100% tested.
1
5
ms
ms
6539 PGM T07
7

7페이지


구       성 총 14 페이지수
다운로드[ X68257JM.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
X68257J

E2 Micro-Peripheral

Xicor
Xicor
X68257JI

E2 Micro-Peripheral

Xicor
Xicor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵