Datasheet.kr   

VN050H 데이터시트 PDF




STMicroelectronics에서 제조한 전자 부품 VN050H은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 VN050H 자료 제공

부품번호 VN050H 기능
기능 HIGH SIDE SMART POWER SOLID STATE RELAY
제조업체 STMicroelectronics
로고 STMicroelectronics 로고


VN050H 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 10 페이지수

미리보기를 사용할 수 없습니다

VN050H 데이터시트, 핀배열, 회로
VN05H
HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE
VN05H
VDSS
60 V
RDS(on)
0.18
IOUT
12 A
VCC
36 V
s OUTPUT CURRENT (CONTINUOUS):
12A @ Tc=25oC
s LOGIC LEVEL 5V COMPATIBLE INPUT
s THERMAL SHUT-DOWN
s UNDER VOLTAGE SHUT-DOWN
s OPEN DRAIN DIAGNOSTIC OUTPUT
s VERY LOW STAND-BY POWER
DISSIPATION
www.DataSheet4U.com
DESCRIPTION
The VN05H is a monolithic devices made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
BLOCK DIAGRAM
PENTAWATT
(vertical)
PENTAWATT
(horizontal)
PENTAWATT
(in-line)
ORDER CODES:
PENTAWATT vertical
VN050H
PENTAWATT horizontal VN050H(011Y)
PENTAWATT in-line
VN050H(012Y)
July 1998
1/10




VN050H pdf, 반도체, 판매, 대치품
VN05H
ELECTRICAL CHARACTERISTICS (Continued)
PROTECTION AND DIAGNOSTICS
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
VSTAT () Status Voltage Output ISTAT = 1.6 mA
Low
0.4 v
VUSD
Under Voltage Shut
Down
5.5 V
VSCL () Status Clamp Voltage ISTAT = 10 mA
ISTAT = -10 mA
6V
-0.7 V
IOV Over Current
IAV Average Current in
Short Circuit
RLOAD < 10 m
RLOAD < 10 m
Tc = 85 oC
20
1.4
A
A
IOL Open Load Current
Level
5 180 mA
TTSD
Termal Shut-Down
Temperature
140 oC
TR Reset Temperature
125 oC
(*) The VIH is internally clamped at 6V about. it is possible to connect thispin to an higher voltage via an external resistor calculated to not
exceed 10 mA at the input pin.
() Status determinaion > 100 µs after the switching edge.
Note 1: Above VCC = 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off it junction temperature
reaches thermal shutdown temperature.
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140 oC. When the
temperature returns to about 125 oC the switch is
automatically turned on again. To ensur the
protection in all VCC conditions and in all the
junction temperature range it is necessary to limit
the voltage drop across Drain and Source (pin 3
and 5) at 29 V. The device is able to withstand a
load dump according the test pulse 5 at level III of
the ISO TR/1 7631.
Above VCC = 36V the output voltage is clamped
to 36V. Power dissipation increases and the
device turns off if junction temperature reaches
thermal shutdown temperature.
PROTECTING THE DEVICE AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diode are as follows:
- If the input is pulled to power GND, a negative
voltage of -VF is seen by the device. (VIL, VIH
thresholds and VSTAT are increased by VF with
respect to power GND).
- The undervoltage shutdown level is increased
by VF.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit infig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of VIH, VIL and VSTAT takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
4/10

4페이지










VN050H 전자부품, 판매, 대치품
DIM.
A
C
D
D1
E
F
F1
G
G1
H2
H3
L
L1
L2
L3
L5
L6
L7
M
M1
Dia
PENTAWATT (VERTICAL) MECHANICAL DATA
MIN.
2.4
1.2
0.35
0.8
1
3.2
6.6
10.05
2.6
15.1
6
3.65
mm
TYP.
3.4
6.8
17.85
15.75
21.4
22.5
4.5
4
MAX.
4.8
1.37
2.8
1.35
0.55
1.05
1.4
3.6
7
10.4
10.4
3
15.8
6.6
3.85
MIN.
0.094
0.047
0.014
0.031
0.039
0.126
0.260
0.396
0.102
0.594
0.236
0.144
inch
TYP.
0.134
0.268
0.703
0.620
0.843
0.886
0.177
0.157
VN05H
MAX.
0.189
0.054
0.110
0.053
0.022
0.041
0.055
0.142
0.276
0.409
0.409
0.118
0.622
0.260
0.152
P010E
7/10

7페이지


구       성 총 10 페이지수
다운로드[ VN050H.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
VN050H

HIGH SIDE SMART POWER SOLID STATE RELAY

STMicroelectronics
STMicroelectronics
VN050H011Y

HIGH SIDE SMART POWER SOLID STATE RELAY

STMicroelectronics
STMicroelectronics

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵