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VN0550 데이터시트 PDF




Supertex Inc에서 제조한 전자 부품 VN0550은 전자 산업 및 응용 분야에서
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부품번호 VN0550 기능
기능 N-Channel Enhancement-Mode Vertical DMOS FETs
제조업체 Supertex Inc
로고 Supertex  Inc 로고


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VN0550 데이터시트, 핀배열, 회로
Supertex inc.
VN0550
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
General Description
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Part Number
Package Option Packing
VN0550N3-G
TO-92
1000/Bag
VN0550N3-G P002
VN0550N3-G P003
VN0550N3-G P005 TO-92
2000/Reel
VN0550N3-G P013
VN0550N3-G P014
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature
-55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
Product Summary
BVDSS/BVDGS
RDS(ON)
(max)
500V
60Ω
Pin Configuration
IDSS
(min)
150mA
SOURCE
DRAIN
GATE
TO-92
Product Marking
SiVN YY = Year Sealed
0 5 5 0 WW = Week Sealed
YYWW
= “Green” Packaging
Typical Thermal Resistance
Package
θja
TO-92
132OC/W
Package may or may not include the following marks: Si or
TO-92
Doc.# DSFP-VN0550
C081913
Supertex inc.
www.supertex.com




VN0550 pdf, 반도체, 판매, 대치품
Typical Performance Curves (cont.)
Output Characteristics
0.5
VGS = 10V
8.0V
0.4
6.0V
0.3
0.2
0.1
0
0 10
20 30
VDS (volts)
4.0V
40
50
Transconductance vs. Drain Current
0.40
VDS = 25V
0.32
0.24 TA = -55OC
25OC
0.16
125OC
0.08
0
0 0.1 0.2 0.3 0.4 0.5
ID (amperes)
Maximum Rated Safe Operating Area
1.0
0.1
TO-92 (DC)
0.01
TC = 25OC
0.001
1.0
10 100
VDS (volts)
Doc.# DSFP-VN0550
C081913
1000
VN0550
Saturation Characteristics
0.25
0.20 VGS = 10V
8.0V
6.0V
0.15
0.10
0.05
0
0
4V
2.0 4.0
6.0 8.0 10
VDS (volts)
Power Dissipation vs. Case Temperature
2.0
TO-92
1.0
0
0 25 50 75 100 125 150
TC (OC)
Thermal Response Characteristics
1.0
0.8
0.6
0.4
TO-92
PD = 1.0W
TC = 25OC
0.2
0
0
0.01
0.1
1.0
10
tP (seconds)
Supertex inc.
4 www.supertex.com

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관련 데이터시트

부품번호상세설명 및 기능제조사
VN0550

N-Channel Enhancement-Mode Vertical DMOS FETs

Supertex  Inc
Supertex Inc

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