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VN05NSP 데이터시트 PDF




STMicroelectronics에서 제조한 전자 부품 VN05NSP은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 VN05NSP 기능
기능 HIGH SIDE SMART POWER SOLID STATE RELAY
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VN05NSP 데이터시트, 핀배열, 회로
® VN05NSP
HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE
VN05NSP
VDSS
60 V
R DS ( o n )
0.18
IOUT
13 A
VCC
26 V
s OUTPUT CURRENT (CONTINUOUS):
13 A @ Tc=25oC
s 5 V LOGIC LEVEL COMPATIBLE INPUT
s THERMAL SHUT-DOWN
s UNDER VOLTAGE SHUT-DOWN
s OPEN DRAIN DIAGNOSTIC OUTPUT
s VERY LOW STAND-BY POWER
DISSIPATION
www.DataSheet4U.com
DESCRIPTION
The VN05NSP is a monolithic devices made
using STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
BLOCK DIAGRAM
10
1
PowerSO-10
June 1998
1/9




VN05NSP pdf, 반도체, 판매, 대치품
VN05NSP
ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS (continued)
Symb ol
P a ram et er
Test Conditions
Min. Typ . Max. Un it
VSCL ()
tSC
IOV
IAV
Status Clamp Voltage
Switch-off T ime in
Short Circuit Condition
at Start-Up
Over Current
Average Current in
Short Circuit
ISTAT = 10 mA
ISTAT = -10 mA
RLOAD < 10 m
RLOAD < 10 m
RLOAD < 10 m
Tc = 25 oC
-40 Tc 125 oC
Tc = 85 oC
6
-0.7
1.5 5
V
V
ms
60
1.4
A
A
IOL Open Load Current
Level
5 180 mA
TTSD
Thermal Shut-down
Temperature
140 oC
TR Reset Temperature
125 oC
(*) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not
exceed 10 mA at the input pin.
() Status determination > 100 µs after the switching edge.
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140 oC. When the
temperature returns to about 125 oC the switch is
automatically turned on again.
In short circuit conditions the protection reacts
with virtually no delay, the sensor being located in
the region of the die where the heat is generated.
PROTECTING THE DEVICE AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diode are as follows:
- If the input is pulled to power GND, a negative
voltage of -VF is seen by the device. (VIL, VIH
thresholds and VSTAT are increased by VF with
respect to power GND).
The undervoltage shutdown level is increased by
VF.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit infig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of VIH, VIL and VSTAT takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
4/9

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VN05NSP 전자부품, 판매, 대치품
RDS(on) vs Junction Temperature
RDS(on) Vs Supply Voltage
VN05NSP
RDS(on) Vs Output Current
Input Voltage vs Junction Temperature
Output Current Derating
Open Load vs Junction Temperature
7/9

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관련 데이터시트

부품번호상세설명 및 기능제조사
VN05NSP

HIGH SIDE SMART POWER SOLID STATE RELAY

STMicroelectronics
STMicroelectronics

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