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부품번호 | VNS1NV04 기능 |
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기능 | OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 18 페이지수
VND1NV04
® / VNN1NV04 / VNS1NV04
“OMNIFET II”:
FULLY AUTOPROTECTED POWER MOSFET
www.DataSheet4U.com
TYPE
VND1NV04
VNN1NV04
VNS1NV04
RDS(on)
250 mΩ
Ilim
1.7 A
Vclamp
40 V
n LINEAR CURRENT LIMITATION
n THERMAL SHUT DOWN
n SHORT CIRCUIT PROTECTION
n INTEGRATED CLAMP
n LOW CURRENT DRAWN FROM INPUT PIN
n DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
n ESD PROTECTION
n DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
n COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VND1NV04, VNN1NV04, VNS1NV04 are
monolithic
devices
designed
in
STMicroelectronics VIPower M0-3 Technology,
intended for replacement of standard Power
BLOCK DIAGRAM
2
3
2
1
SOT-223
SO-8
3
1
TO-252 (DPAK)
ORDER CODES:
TO-252 (DPAK)
SOT-223
SO-8
VND1NV04
VNN1NV04
VNS1NV04
MOSFETS from DC up to 50KHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Overvoltage
Clamp
DRAIN
2
INPUT
1
Gate
Control
February 2003
Over
Temperature
Linear
Current
Limiter
3
SOURCE
FC01000
1/18
VND1NV04 / VNN1NV04 / VNS1NV04
ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)
DYNAMIC
Symbol
gfs (**)
COSS
Parameter
Forward
Transconductance
Output Capacitance
Test Conditions
VDD=13V; ID=0.5A
VDS=13V; f=1MHz; VIN=0V
Min Typ Max
2
90
SWITCHING
Symbol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
(dI/dt)on
Parameter
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Qi Total Input Charge
Test Conditions
VDD=15V; ID=0.5A
Vgen=5V; Rgen=RIN MIN=330Ω
(see figure 1)
VDD=15V; ID=0.5A
Vgen=5V; Rgen=2.2KΩ
(see figure 1)
VDD=15V; ID=1.5A
Vgen=5V; Rgen=RIN MIN=330Ω
VDD=12V; ID=0.5A; VIN=5V
Igen=2.13mA (see figure 5)
Min Typ Max
70 200
170 500
350 1000
200 600
0.25 1.0
1.3 4.0
1.8 5.5
1.2 4.0
5.0
5.0
SOURCE DRAIN DIODE
Symbol
VSD (*)
trr
Qrr
IRRM
Parameter
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Test Conditions
ISD=0.5A; VIN=0V
ISD=0.5A; dI/dt=6A/µs
VDD=30V; L=200µH
(see test circuit, figure 2)
Min Typ Max
0.8
205
100
0.75
PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)
Symbol
Ilim
tdlim
Parameter
Drain Current Limit
Step Response Current
Limit
Test Conditions
VIN=5V; VDS=13V
VIN=5V; VDS=13V
Min Typ Max
1.7 3.5
2.0
Overtemperature
Tjsh Shutdown
150 175 200
Tjrs Overtemperature Reset
135
Igf Fault Sink Current
VIN=5V; VDS=13V; Tj=Tjsh
10 15
Single Pulse
Eas Avalanche Energy
Starting Tj=25°C; VDD=24V
VIN=5V; Rgen=RIN MIN=330Ω; L=50mH
(see figures 3 & 4)
55
20
(**) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
Unit
S
pF
Unit
ns
ns
ns
ns
µs
µs
µs
µs
A/µs
nC
Unit
V
ns
µC
A
Unit
A
µs
°C
°C
mA
mJ
4/18
2
4페이지 VND1NV04 / VNN1NV04 / VNS1NV04
Figure 3: Unclamped Inductive Load Test Circuits Figure 4: Unclamped Inductive Waveforms
VIN
PW
RGEN
Figure 5: Input Charge Test Circuit
Figure 6: Thermal Impedance for SOT-223
VIN GEN
ND8003
Figure 7: Thermal Impedance for DPAK/IPAK
7/18
7페이지 | |||
구 성 | 총 18 페이지수 | ||
다운로드 | [ VNS1NV04.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
VNS1NV04 | OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET | STMicroelectronics |
VNS1NV04D | OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |