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부품번호 | VNS3NV04D 기능 |
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기능 | FULLY AUTOPROTECTED POWER MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 14 페이지수
® VNS3NV04D
“OMNIFET II”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
RDS(on)
VNS3NV04D 120 mΩ (*)
Ilim
3.5 A (*)
Vclamp
40 V (*)
(*)Per each device
n LINEAR CURRENT LIMITATION
)n THERMAL SHUT DOWN
t(sn SHORT CIRCUIT PROTECTION
cn INTEGRATED CLAMP
un LOW CURRENT DRAWN FROM INPUT PIN
dn DIAGNOSTIC FEEDBACK THROUGH INPUT
roPIN
Pn ESD PROTECTION
ten DIRECT ACCESS TO THE GATE OF THE
lePOWER MOSFET (ANALOG DRIVING)
on COMPATIBLE WITH STANDARD POWER
sMOSFET
bDESCRIPTION
OThe VNS3NV04D is a device formed by two
-monolithic OMNIFET II chips housed in a
)standard SO-8 package. The OMNIFET II are
t(sdesigned in STMicroelectronics VIPower M0-3
cTechnology: they are intended for replacement of
ustandard Power MOSFETS from DC up to 50KHz
rodBLOCK DIAGRAM
SO-8
applications. Built in thermal shutdown, linear
current limitation and overvoltage clamp protects
the chip in harsh environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
lete P DRAIN1
bso OVERVOLTAGE
O CLAMP
DRAIN2
OVERVOLTAGE
CLAMP
INPUT1
GATE
CONTROL
GATE
CONTROL
INPUT2
OVER
TEMPERATURE
LINEAR
CURRENT
LIMITER
LINEAR
CURRENT
LIMITER
OVER
TEMPERATURE
SOURCE1
SOURCE2
September 2013
DocID7396 Rev 4
1/14
1
VNS3NV04D
ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)
DYNAMIC
Symbol
gfs (*)
COSS
Parameter
Forward
Transconductance
Output Capacitance
Test Conditions
VDD=13V; ID=1.5A
VDS=13V; f=1MHz; VIN=0V
Min Typ Max Unit
5.0 S
150 pF
SWITCHING
Symbol
Parameter
Test Conditions
Min Typ Max Unit
td(on)
tr
t(s)td(off)
tf
ctd(on)
dutr
rotd(off)
tf
te P(dI/dt)on
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
oleQi Total Input Charge
VDD=15V; ID=1.5A
Vgen=5V; Rgen=RIN MINn=220Ω
(see figure 1)
VDD=15V; ID=1.5A
Vgen=5V; Rgen=2.2KΩ
(see figure 1)
VDD=15V; ID=1.5A
Vgen=5V; Rgen=RIN MINn=220Ω
VDD=12V; ID=1.5A; VIN=5V
Igen =2.13mA (see figure 5)
bsSOURCE DRAIN DIODE
OSymbol
) -VSD (*)
t(strr
Qrr
cIRRM
Parameter
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Test Conditions
ISD=1.5A; VIN=0V
ISD=1.5A; dI/dt=12A/µs
VDD=30V; L=200µH
(see test circuit, figure 2)
roduPROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)
Symbol
Parameter
Test Conditions
PIlim Drain Current Limit
VIN=5V; VDS=13V
letetdlim
Step Response Current
Limit
VIN=5V; VDS=13V
o Overtemperature
sTjsh Shutdown
Ob Tjrs Overtemperature Reset
90
250
450
250
0.45
2.5
3.3
2.0
4.7
300
750
1350
750
1.35
7.5
10.0
6.0
ns
ns
ns
ns
µs
µs
µs
µs
A/µs
8.5 nC
Min Typ Max Unit
0.8 V
107 ns
37 µC
0.7 A
Min Typ Max Unit
3.5 5 7 A
10 µs
150 175 200
135
°C
°C
Igf Fault Sink Current
VIN=5V; VDS=13V; Tj=Tjsh
10 15 20 mA
Single Pulse
Eas Avalanche Energy
starting Tj=25°C; VDD=24V
VIN=5V; Rgen=RIN MINn=220Ω; L=24mH
(see figures 3 & 4)
100
mJ
(*) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
4/14
2
4페이지 Fig. 3: Unclamped Inductive Load Test Circuits
VNS3NV04D
Fig. 4: Unclamped Inductive Waveforms
VIN
t(s)PW
RGEN
roducFig. 5: Input Charge Test Circuit
Obsolete Product(s) - Obsolete PVIN
17/14
1
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부품번호 | 상세설명 및 기능 | 제조사 |
VNS3NV04 | OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET | STMicroelectronics |
VNS3NV04D | FULLY AUTOPROTECTED POWER MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |