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VNV14N04 데이터시트 PDF




STMicroelectronics에서 제조한 전자 부품 VNV14N04은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 VNV14N04 기능
기능 fully autoprotected Power MOSFET
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VNV14N04 데이터시트, 핀배열, 회로
VNB14N04 - VNK14N04FM
VNV14N04
"OMNIFET"
fully autoprotected Power MOSFET
Features
Type
Vclamp
RDS(on)
Ilim
VNB14N04
t(s)VNK14N04FM
VNV14N04
42 V
42 V
42 V
0.07
0.07
0.07
14 A
14 A
14 A
ducs Linear current limitation
ros Thermal shutdown
Ps Short circuit protection
tes Integrated clamp
oles Low current drawn from input pin
ss Diagnostic feedback through input pin
Obs ESD protection
-s Direct access to the gate of the power
)MOSFET (analog driving)
Obsolete Product(ss Compatible with standard power MOSFET
Description
The VNB14N04, VNK14N04FM and VNV14N04
are monolithic devices made using
STMicroeletronics VIPower M0 Technology,
intended for replacement of standard power
MOSFETS in DC to 50 kHz applications. Built-in
thermal shutdown, linear current limitation and
overvoltage clamp protect the chip in harsh
environment.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Table 1. Device summary
Part number
Order code
VNB14N04
VNB14N04, VNB14N04-E,
VNB14N0413TR, VNB14N04TR-E
VNK14N04FM VNK14N04FM
VNV14N04 VNV14N04, VNV14N04-E
September 2013
Rev 7
1/17
www.st.com
17




VNV14N04 pdf, 반도체, 판매, 대치품
Electrical specification
2 Electrical specification
VNB14N04 - VNK14N04FM - VNV14N04
2.1 Absolute maximum rating
Table 2. Absolute maximum rating
Value
Symbol
Parameter
PowerSO-10
D2PAK
SOT-82FM
Unit
) - Obsolete Product(s)2.2
Obsolete Product(s2.3
VDS Drain-source voltage (Vin = 0)
Vin Input voltage
ID Drain current
IR Reverse DC output current
Electrostatic discharge (C = 100 pF,
Vesd R=1.5 K)
Ptot Total dissipation at Tc = 25 °C
Tj Operating junction temperature
Tc Case operating temperature
Tstg Storage temperature
Internally clamped
18
Internally limited
-14
2000
50 9.5
Internally limited
Internally limited
-55 to 150
V
V
A
A
V
W
°C
°C
°C
Thermal data
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Thermal resistance junction-ambient
Rthj-amb max
PowerSO-10 SOT82-FM
2.5 13
50 100
D2PAK
2.5
62.5
Unit
°C/W
°C/W
Electrical characteristics
Tcase =25 °C unless otherwise specified.
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
Min. Typ. Max. Unit
Off
VCLAMP Drain-source clamp voltage
VCLTH Drain-source clamp threshold voltage
VINCL Input-source reverse clamp voltage
ID = 200 mA Vin = 0
ID = 2 mA Vin = 0
Iin = -1 mA
36 42 48 V
35 V
-1 -0.3 V
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VNV14N04 전자부품, 판매, 대치품
VNB14N04 - VNK14N04FM - VNV14N04
3 Protection features
Protection features
During normal operation, the Input pin is electrically connected to the gate of the internal
power MOSFET. The device then behaves like a standard power MOSFET and can be used
as a switch from DC to 50 kHz. The only difference from the user’s standpoint is that a small
DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.
The device integrates:
q Overvoltage clamp protection: internally set at 42 V, along with the rugged avalanche
characteristics of the Power MOSFET stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly important when driving inductive
loads.
)q Linear current limiter circuit: limits the drain current Id to Ilim whatever the Input pin
t(svoltage. When the current limiter is active, the device operates in the linear region, so
power dissipation may exceed the capability of the heatsink. Both case and junction
ctemperatures increase, and if this phase lasts long enough, junction temperature may
dureach the overtemperature threshold Tjsh.
roq Overtemperature and short circuit protection: these are based on sensing the chip
Ptemperature and are not dependent on the input voltage. The location of the sensing
teelement on the chip in the power stage area ensures fast, accurate detection of the
junction temperature. Overtemperature cutout occurs at minimum 150 °C. The device
leis automatically restarted when the chip temperature falls below 135 °C.
soq Status feedback: in the case of an overtemperature fault condition, a Status Feedback
bis provided through the Input pin. The internal protection circuit disconnects the input
Ofrom the gate and connects it instead to ground via an equivalent resistance of 100 .
-The failure can be detected by monitoring the voltage at the Input pin, which will be
)close to ground potential.
t(sAdditional features of this device are ESD protection according to the Human Body model
Obsolete Producand the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).
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VNV14N04

fully autoprotected Power MOSFET

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