Datasheet.kr   

V29C51002B 데이터시트 PDF




Mosel Vitelic Corp에서 제조한 전자 부품 V29C51002B은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 V29C51002B 자료 제공

부품번호 V29C51002B 기능
기능 2 MEGABIT 262/144 x 8 BIT 5 VOLT CMOS FLASH MEMORY
제조업체 Mosel Vitelic Corp
로고 Mosel Vitelic  Corp 로고


V29C51002B 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 16 페이지수

미리보기를 사용할 수 없습니다

V29C51002B 데이터시트, 핀배열, 회로
MOSEL VITELIC
V29C51002T/V29C51002B
2 MEGABIT (262,144 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
PRELIMINARY
Features
s 256Kx8-bit Organization
s Address Access Time: 55, 90 ns
s Single 5V ± 10% Power Supply
s Sector Erase Mode Operation
s 16KB Boot Block (lockable)
s 512 bytes per Sector, 512 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Write Cycle Time: 20µs (Max)
s Minimum 10,000 Erase-Program Cycles
s Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 100µA (Max)
s Hardware Data Protection
s Low VCC Program Inhibit Below 3.5V
s Self-timed write/erase operations with end-of-cy-
cle detection
– DATA Polling
– Toggle Bit
s CMOS and TTL Interface
s Available in two versions
– V29C51002T (Top Boot Block)
– V29C51002B (Bottom Boot Block)
s Packages:
– 32-pin Plastic DIP
– 32-pin TSOP-I
– 32-pin PLCC
Description
The V29C51002T/V29C51002B is a high speed
262,144 x 8 bit CMOS flash memory. Writing or
erasing the device is done with a single 5 Volt
power supply. The device has separate chip enable
CE, write enable WE, and output enable OE
controls to eliminate bus contention.
The V29C51002T/V29C51002B offers a combi-
nation of: Boot Block with Sector Erase/Write
Mode. The end of write/erase cycle is detected by
DATA Polling of I/O7 or by the Toggle Bit I/O6.
The V29C51002T/V29C51002B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. The device also
supports full chip erase.
Boot block architecture enables the device to
boot from a protected sector located either at the
top (V29C51002T) or the bottom (V29C51002B).
All inputs and outputs are CMOS and TTL
compatible.
The V29C51002T/V29C51002B is ideal for
applications that require updatable code and data
storage.
Device Usage Chart
Operating
Temperature
Range
0°C to 70°C
Package Outline
PTJ
•••
Access Time (ns)
55 90
••
Temperature
Mark
Blank
V29C51002T/V29C51002B Rev. 2.1 October 2000
1




V29C51002B pdf, 반도체, 판매, 대치품
MOSEL VITELIC
V29C51002T/V29C51002B
Absolute Maximum Ratings(1)
Symbol
Parameter
Commercial
Unit
VIN Input Voltage (input or I/O pins)
-2 to +7
V
VIN Input Voltage (A9 pin, OE)
-2 to +13
V
VCC Power Supply Voltage
-0.5 to +5.5
V
TSTG
Storage Temerpature (Plastic)
-65 to +125
°C
TOPR
IOUT
Operating Temperature
Short Circuit Current(2)
0 to +70
200 (Max.)
°C
mA
NOTE:
1. Stress greater than those listed unders Absolute Maximum Ratingsmay cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. No more than one output maybe shorted at a time and not exceeding one second long.
DC Electrical Characteristics
(over the commercial operating range)
Parameter
Name
VIL
VIH
IIL
IOL
VOL
VOH
ICC1
Parameter
Input LOW Voltage
Input HIGH Voltage
Input Leakage Current
Output Leakage Current
Output LOW Voltage
Output HIGH Voltage
Read Current
ICC2 Write Current
ISB TTL Standby Current
ISB1 CMOS Standby Current
VH Device ID Voltage for A9
IH Device ID Current for A9
Test Conditions
VCC = VCC Min.
VCC = VCC Max.
VIN = GND to VCC, VCC = VCC Max.
VOUT = GND to VCC, VCC = VCC Max.
VCC = VCC Min., IOL = 2.1mA
VCC = VCC Min, IOH = -400µA
CE = OE = VIL, WE = VIH, all I/Os open,
Address input = VIL/VIH, at f = 1/tRC Min.,
VCC = VCC Max.
CE = WE = VIL, OE = VIH, VCC = VCC Max.
CE = OE = WE = VIH, VCC = VCC Max.
CE = OE = WE = VCC 0.3V, VCC = VCC Max.
CE = OE = VIL, WE = VIH
CE = OE = VIL, WE = VIH, A9 = VH Max.
Min.
2
2.4
Max.
0.8
±1
±10
0.4
40
Unit
V
V
µA
µA
V
V
mA
50
2
100
11.5 12.5
50
mA
mA
µA
V
µA
V29C51002T/V29C51002B Rev. 2.1 October 2000
4

4페이지










V29C51002B 전자부품, 판매, 대치품
MOSEL VITELIC
V29C51002T/V29C51002B
Waveforms of CE Controlled-Program Cycle
ADDRESS
WE
tWC
5555H
PA
tAS
tAH
PA(1)
tRC
OE
tWP tWHWH1
CE
tOES
tWPH
tDS
tDH
I/O
A0H
PD(2)
I/O7 DOUT
Waveforms of Erase Cycle(1)
ADDRESS
tWC
5555H
tAS
2AAAH
CE
5555H
tAH
5555H
2AAAH
tOE
tDF
tOH
51002-11
(5555H for Chip Erase)
SA
OE
tWP
WE
tCS tWPH
tDS
tDH
I/O
AAH
55H
80H
NOTES:
1. PA: The address of the memory location to be programmed.
2. PD: The data at the byte address to be programmed.
3. SA: The sector address for Sector Erase.
AAH
55H
tWHWH 23
(10H for
Chip Erase)
30H
51002-12
V29C51002T/V29C51002B Rev. 2.1 October 2000
7

7페이지


구       성 총 16 페이지수
다운로드[ V29C51002B.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
V29C51002B

2 MEGABIT 262/144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Mosel Vitelic  Corp
Mosel Vitelic Corp
V29C51002T

2 MEGABIT 262/144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Mosel Vitelic  Corp
Mosel Vitelic Corp

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵