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부품번호 | V29C51002B 기능 |
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기능 | 2 MEGABIT 262/144 x 8 BIT 5 VOLT CMOS FLASH MEMORY | ||
제조업체 | Mosel Vitelic Corp | ||
로고 | |||
전체 16 페이지수
MOSEL VITELIC
V29C51002T/V29C51002B
2 MEGABIT (262,144 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
PRELIMINARY
Features
s 256Kx8-bit Organization
s Address Access Time: 55, 90 ns
s Single 5V ± 10% Power Supply
s Sector Erase Mode Operation
s 16KB Boot Block (lockable)
s 512 bytes per Sector, 512 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Write Cycle Time: 20µs (Max)
s Minimum 10,000 Erase-Program Cycles
s Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 100µA (Max)
s Hardware Data Protection
s Low VCC Program Inhibit Below 3.5V
s Self-timed write/erase operations with end-of-cy-
cle detection
– DATA Polling
– Toggle Bit
s CMOS and TTL Interface
s Available in two versions
– V29C51002T (Top Boot Block)
– V29C51002B (Bottom Boot Block)
s Packages:
– 32-pin Plastic DIP
– 32-pin TSOP-I
– 32-pin PLCC
Description
The V29C51002T/V29C51002B is a high speed
262,144 x 8 bit CMOS flash memory. Writing or
erasing the device is done with a single 5 Volt
power supply. The device has separate chip enable
CE, write enable WE, and output enable OE
controls to eliminate bus contention.
The V29C51002T/V29C51002B offers a combi-
nation of: Boot Block with Sector Erase/Write
Mode. The end of write/erase cycle is detected by
DATA Polling of I/O7 or by the Toggle Bit I/O6.
The V29C51002T/V29C51002B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. The device also
supports full chip erase.
Boot block architecture enables the device to
boot from a protected sector located either at the
top (V29C51002T) or the bottom (V29C51002B).
All inputs and outputs are CMOS and TTL
compatible.
The V29C51002T/V29C51002B is ideal for
applications that require updatable code and data
storage.
Device Usage Chart
Operating
Temperature
Range
0°C to 70°C
Package Outline
PTJ
•••
Access Time (ns)
55 90
••
Temperature
Mark
Blank
V29C51002T/V29C51002B Rev. 2.1 October 2000
1
MOSEL VITELIC
V29C51002T/V29C51002B
Absolute Maximum Ratings(1)
Symbol
Parameter
Commercial
Unit
VIN Input Voltage (input or I/O pins)
-2 to +7
V
VIN Input Voltage (A9 pin, OE)
-2 to +13
V
VCC Power Supply Voltage
-0.5 to +5.5
V
TSTG
Storage Temerpature (Plastic)
-65 to +125
°C
TOPR
IOUT
Operating Temperature
Short Circuit Current(2)
0 to +70
200 (Max.)
°C
mA
NOTE:
1. Stress greater than those listed unders “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. No more than one output maybe shorted at a time and not exceeding one second long.
DC Electrical Characteristics
(over the commercial operating range)
Parameter
Name
VIL
VIH
IIL
IOL
VOL
VOH
ICC1
Parameter
Input LOW Voltage
Input HIGH Voltage
Input Leakage Current
Output Leakage Current
Output LOW Voltage
Output HIGH Voltage
Read Current
ICC2 Write Current
ISB TTL Standby Current
ISB1 CMOS Standby Current
VH Device ID Voltage for A9
IH Device ID Current for A9
Test Conditions
VCC = VCC Min.
VCC = VCC Max.
VIN = GND to VCC, VCC = VCC Max.
VOUT = GND to VCC, VCC = VCC Max.
VCC = VCC Min., IOL = 2.1mA
VCC = VCC Min, IOH = -400µA
CE = OE = VIL, WE = VIH, all I/Os open,
Address input = VIL/VIH, at f = 1/tRC Min.,
VCC = VCC Max.
CE = WE = VIL, OE = VIH, VCC = VCC Max.
CE = OE = WE = VIH, VCC = VCC Max.
CE = OE = WE = VCC – 0.3V, VCC = VCC Max.
CE = OE = VIL, WE = VIH
CE = OE = VIL, WE = VIH, A9 = VH Max.
Min.
—
2
—
—
—
2.4
—
Max.
0.8
—
±1
±10
0.4
—
40
Unit
V
V
µA
µA
V
V
mA
— 50
—2
— 100
11.5 12.5
— 50
mA
mA
µA
V
µA
V29C51002T/V29C51002B Rev. 2.1 October 2000
4
4페이지 MOSEL VITELIC
V29C51002T/V29C51002B
Waveforms of CE Controlled-Program Cycle
ADDRESS
WE
tWC
5555H
PA
tAS
tAH
PA(1)
tRC
OE
tWP tWHWH1
CE
tOES
tWPH
tDS
tDH
I/O
A0H
PD(2)
I/O7 DOUT
Waveforms of Erase Cycle(1)
ADDRESS
tWC
5555H
tAS
2AAAH
CE
5555H
tAH
5555H
2AAAH
tOE
tDF
tOH
51002-11
(5555H for Chip Erase)
SA
OE
tWP
WE
tCS tWPH
tDS
tDH
I/O
AAH
55H
80H
NOTES:
1. PA: The address of the memory location to be programmed.
2. PD: The data at the byte address to be programmed.
3. SA: The sector address for Sector Erase.
AAH
55H
tWHWH 23
(10H for
Chip Erase)
30H
51002-12
V29C51002T/V29C51002B Rev. 2.1 October 2000
7
7페이지 | |||
구 성 | 총 16 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
V29C51002B | 2 MEGABIT 262/144 x 8 BIT 5 VOLT CMOS FLASH MEMORY | Mosel Vitelic Corp |
V29C51002T | 2 MEGABIT 262/144 x 8 BIT 5 VOLT CMOS FLASH MEMORY | Mosel Vitelic Corp |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |