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V29LC51001 데이터시트 PDF




Mosel Vitelic Corp에서 제조한 전자 부품 V29LC51001은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 V29LC51001 기능
기능 1 MEGABIT 131/072 x 8 BIT 5 VOLT CMOS FLASH MEMORY
제조업체 Mosel Vitelic Corp
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V29LC51001 데이터시트, 핀배열, 회로
MOSEL VITELIC
V29LC51001
1 MEGABIT (131,072 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
PRELIMINARY
Features
s 128Kx8-bit Organization
s Address Access Time: 90 ns
s Single 5V ± 10% Power Supply
s Sector Erase Mode Operation
s 512 bytes per Sector, 256 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Program Cycle Time: 30µs (Max)
s Minimum 1,000 Erase-Program Cycles
s Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 100µA (Max)
s Low VCC Program Inhibit Below 3.2V
s Self-timed program/erase operations
s CMOS and TTL Interface
s Packages:
– 32-pin Plastic DIP
– 32-pin PLCC
Description
The V29LC51001 is a high speed 131,072 x 8 bit
CMOS flash memory. Programming or erasing the
device is done with a single 5 Volt power supply.
The device has separate chip enable CE, program
enable WE, and output enable OE controls to
eliminate bus contention.
The V29LC51001 features a sector erase
operation which allows each sector to be erased
and reprogrammed without affecting data stored in
other sectors. The device also supports full chip
erase.
Device Usage Chart
Operating
Temperature
Range
0°C to 70°C
V29LC51001 Rev. 0.5 October 2000
Package Outline
PJ
••
Access Time (ns)
90
Temperature
Mark
Blank
1




V29LC51001 pdf, 반도체, 판매, 대치품
MOSEL VITELIC
V29LC51001
Absolute Maximum Ratings(1)
Symbol
Parameter
Commercial
Unit
VIN Input Voltage (input or I/O pins)
-2 to +7
V
VIN Input Voltage (A9 pin, OE)
-2 to +13
V
VCC Power Supply Voltage
-0.5 to +5.5
V
TSTG
Storage Temerpature (Plastic)
-65 to +125
°C
TOPR
IOUT
Operating Temperature
Short Circuit Current(2)
0 to +70
200 (Max.)
°C
mA
NOTE:
1. Stress greater than those listed unders Absolute Maximum Ratingsmay cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. No more than one output maybe shorted at a time and not exceeding one second long.
DC Electrical Characteristics
(over the commercial operating range)
Parameter
Name
VIL
VIH
IIL
IOL
VOL
VOH
ICC1
Parameter
Input LOW Voltage
Input HIGH Voltage
Input Leakage Current
Output Leakage Current
Output LOW Voltage
Output HIGH Voltage
Read Current
ICC2 Program Current
ISB TTL Standby Current
ISB1 CMOS Standby Current
VH Device ID Voltage for A9
IH Device ID Current for A9
Test Conditions
VCC = VCC Min.
VCC = VCC Max.
VIN = GND to VCC, VCC = VCC Max.
VOUT = GND to VCC, VCC = VCC Max.
VCC = VCC Min., IOL = 2.1mA
VCC = VCC Min, IOH = -400µA
CE = OE = VIL, WE = VIH, all I/Os open,
Address input = VIL/VIH, at f = 1/tRC Min.,
VCC = VCC Max.
CE = WE = VIL, OE = VIH, VCC = VCC Max.
CE = OE = WE = VIH, VCC = VCC Max.
CE = OE = WE = VCC 0.3V, VCC = VCC Max.
CE = OE = VIL, WE = VIH
CE = OE = VIL, WE = VIH, A9 = VH Max.
Min.
2
2.4
Max.
0.8
±1
±10
0.4
40
Unit
V
V
µA
µA
V
V
mA
50
2
100
11.5 12.5
50
mA
mA
µA
V
µA
V29LC51001 Rev. 0.5 October 2000
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V29LC51001 전자부품, 판매, 대치품
MOSEL VITELIC
Waveforms of Erase Cycle(1)
ADDRESS
tWC
5555H
tAS
2AAAH
CE
5555H
tAH
5555H
2AAAH
V29LC51001
SA
OE
tWP
WE
tCS tWPH
tDS
tDH
I/O
AAH
55H
80H AAH
NOTES:
1. PA: The address of the memory location to be programmed.
2. PD: The data at the byte address to be programmed.
3. SA: The sector address for Sector Erase. Address = dont care for Chip Erase.
55H
10H for
Chip Erase
30H
51001-10
V29LC51001 Rev. 0.5 October 2000
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Mosel Vitelic  Corp
Mosel Vitelic Corp
V29LC51001

1 MEGABIT 131/072 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Mosel Vitelic  Corp
Mosel Vitelic Corp

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