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PDF VFT150-28 Data sheet ( Hoja de datos )
| Número de pieza | VFT150-28 | |
| Descripción | VHF POWER MOSFET Channel Enhancement Mode | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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VFT150-28
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The VFT150-28 is Designed for General
Purpose Class B Power Amplifier
Applications up to 175 MHz.
FEATURES:
• PG = 10 dB Typical at 175 MHz
• 10:1 Load VSWR Capability
• Omnigold™ Metalization System
MAXIMUM RATINGS
ID 16 A
VDSS
65 V
VGS
PDISS
TJ
T STG
θ JC
±40 V
300 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.6 OC/W
PACKAGE STYLE .500 4L FLG
A
FULL R
.112x45°
S
C
B
E
H
G
D
GF
L
D
S
Ø.125 NOM.
K
IJ
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MINIMUM
inches / mm
.220 / 5.59
.245 / 6.22
.720 / 18.28
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.980 / 24.89
.125 / 3.18
.125 / 3.18
MAXIMUM
inches / mm
.230 / 5.84
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
ORDER CODE: ASI 10700
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVDSS
ID = 100 mA
IDSS
VDS = 28 V
VGS = 0 V
IGSS VDS = 0 V VGS = 20 V
VGS(th)
ID = 100 mA VDS = 10 V
gfs ID = 5 A
VDS = 10 V
MINIMUM
60
1.0
3500
NONE
TYPICAL MAXIMUM
5.0
1.0
5.0
UNITS
V
mA
µA
V
mS
Ciss
Coss
Crss
VDS = 28 V
VGS = 0 V
f = 1.0 MHz
375
190
25
pF
PG
VDD = 28 V
IDQ = 250 mA
ηD
Pout = 150 W
f = 175 MHz
8.5
50
10
60
dB
%
ψ VSWR = 10:1 AT ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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