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PDF VFT300-28 Data sheet ( Hoja de datos )
| Número de pieza | VFT300-28 | |
| Descripción | VHF POWER MOSFET Silicon N-Channel Enhancement Mode | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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VFT300-28
VHF POWER MOSFET
Silicon N-Channel Enhancement Mode
DESCRIPTION:
The VFT300-28 is Designed for
Wideband High Power VHF Amplifier
Applications operating up to 250 MHz.
FEATURES:
• PG = 14 dB Typical at 175 MHz
• η D = 55% Typ. at POUT = 300 Watts
• Omnigold™ Metalization System
MAXIMUM RATINGS
ID 16 A
V(BR)DSS
65 V
VDGR
65 V
VGS
PDISS
TJ
T STG
θ JC
± 40 V
300 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.6 OC/W
PACKAGE STYLE .400 BAL FLG (D)
.080x45°
A
.1925
E
DC
D
B
D
FULL R
(4X).060 R
M
GG
F
G
H
N
I
Sources are connected
to flange
L
J
K
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .220 / 5.59
.230 / 5.84
B .210 / 5.33
C .125 / 3.18
D .380 / 9.65
.390 / 9.91
E .580 / 14.73
.620 / 15.75
F .435 / 11.05
G 1.090 / 27.69
1.105 / 28.07
H 1.335 / 33.91
1.345 / 34.16
I .003 / 0.08
J .060 / 1.52
K .100 / 2.54
L
M .395 / 10.03
N .850 / 21.59
.007 / 0.18
.070 / 1.78
.115 / 2.92
.230 / 5.84
.407 / 10.34
.870 / 22.10
ORDER CODE: ASI10707
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
V(BR)DSS
VGS = 0 V
IDS = 100 mA
IDSS VDS = 28 V
VGS = 0 V
IGSS VDS = 0 V
VGS = 20 V
VGS VDS = 10 V
ID = 100 mA
VDS VGS = 10 V
ID = 10 A
GFS VDS = 10 V
ID = 5 A
MINIMUM TYPICAL MAXIMUM
65
5.0
1.0
1.0 5.0
1.5
3500
UNITS
V
mA
µA
V
V
mS
Ciss
Coss
Crss
VGS = 28 V
VDS = 0 V
F = 1.0 MHz
375
188
26
pF
GPS
VDD = 28 V
IDQ = 2 x 250 mA
POUT = 300 W
12
η D f = 175 MHz
50
14
55
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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