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PDF VFT80-28 Data sheet ( Hoja de datos )
| Número de pieza | VFT80-28 | |
| Descripción | VHF POWER MOSFET N-Channel Enhancement Mode | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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VFT80-28
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The VFT80-28 is Designed for
General Purpose Class B Power
Amplifier Applications up to 175 MHz.
FEATURES:
• PG = 10 dB Typical at 175 MHz
• 10:1 Load VSWR Capability
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 10 A
VCB 60 V
VCE
PDISS
TJ
T STG
θ JC
35 V
140 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
1.5 OC/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
SD
Ø.125 NOM.
FULL R
J
.125
GS
C
D
FE
GH I
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .785 / 19.94
C .720 / 18.29
D .970 / 24.64
E
F .004 / 0.10
G .085 / 2.16
H .160 / 4.06
I
J .240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10705
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVDSS
ID = 100 mA
IDSS
VDS = 28 V
VGS = 0 V
IGSS VDS = 0 V VGS = 20 V
VGS(th)
ID = 50 mA
VDS = 10 V
gfs ID = 2 A
VDS = 10 V
MINIMUM
60
1.0
1200
NONE
TYPICAL MAXIMUM
5.0
1.0
6.0
UNITS
V
mA
µA
V
mS
Ciss
Coss
Crss
VDS = 28 V
VGS = 0 V
f = 1.0 MHz
105
165
20
pF
PG VDD = 28 V IDQ = 25 mA
ηD
Pout = 80 W
f = 175 MHz
10
50
12
60
dB
%
ψ VSWR = 30:1 AT ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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