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VG26V17400EJ-6 데이터시트 PDF




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부품번호 VG26V17400EJ-6 기능
기능 4/194/304 x 4 - Bit CMOS Dynamic RAM
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VG26V17400EJ-6 데이터시트, 핀배열, 회로
VIS
Description
VG26(V)(S)17400E
4,194,304 x 4 - Bit
CMOS Dynamic RAM
The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated
with an advanced submicron CMOS technology and designed to operate from a single 5V only
or 3.3V only power supply. Low voltage operation is more suitable to be used on battery
backup, portable electronic application. A new refresh feature called “ self-refresh “ is supported
and very slow CBR cycles are being performed. It is packaged in JEDEC standard 26/24 - pin
plastic SOJ or TSOP (II).
Features
• Single 5V (±10 %) or 3.3V (±10 %) only power supply
• High speed tRAC access time : 50/60 ns
• Low power dissipation
- Active mode : 5V version 605/550 mW (Max.)
3.3V version 396/360 mW (Max.)
- Standby mode : 5V version 1.375 mW (Max.)
3.3V version 0.54 mW (Max.)
• Fast Page Mode access
• I/O level : TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
• 2048 refresh cycles in 32 ms (Std) or 128ms (S - version)
• 4 refresh mode :
- RAS only refresh
- CAS-before-RAS refresh
- Hidden refresh
- Self - refresh (S - version)
Document : 1G5-0142
Rev.1
Page 1




VG26V17400EJ-6 pdf, 반도체, 판매, 대치품
VIS
VG26(V)(S)17400E
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Truth Table
FUNCTION
STANDBY
READ
WRITE : (EARLY
WRITE)
READ WRITE
RAS
H
L
L
L
CAS
HX
L
L
L
PAGE -
MODE READ
1st Cycle
2st
Cycle
L
L
PAGE -
1st Cycle
MODE WRITE 2st
Cycle
L
L
PAGE - MODE 1st Cycle
READ - WRITE
2st
Cycle
L
L
HIDDEN
REFRESH
READ
WRITE
LHL
LHL
RAS - ONLY REFRESH
L
CBR REFRESH
HL
Notes : 1. EARLY WRITE only.
HL
HL
HL
HL
HL
HL
L
L
H
L
ADDRESSES
ROW COL
WE OE
DQS
X X X X High - Z
H L ROW COL Data - Out
L X ROW COL Data - In
H L L H ROW
H L ROW
H L n/a
COL Data - Out, Data - In
COL Data - Out
COL Data - Out
L X ROW COL Data - In
L X n/a COL Data - In
H L L H ROW
H L L H n/a
COL Data - Out, Data - In
COL Data - Out, Data - In
H L ROW COL Data - Out
L X ROW COL Data - In
X X ROW n/a High - Z
H X X X High - Z
Notes
1
Document : 1G5-0142
Rev.1
Page 4

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VG26V17400EJ-6 전자부품, 판매, 대치품
VIS
VG26(V)(S)17400E
4,194,304 x 4 - Bit
CMOS Dynamic RAM
DC Characteristics ; 5 - Volt Version (cont.)
(Ta = 0 to 70°C, VCC = + 5V±10%, Vss = 0V)
Parameter
Symbol
Test Conditions
VG26 (V) (S) 17400E
-5 -6
Min Max Min Max Unit Notes
lnput leakage
current
ILI 0V Vin VCC + 0.5V
-5 5 -5 5 µA
Output leakage
current
ILO 0V Vout VCC + 0.5V
Dout = Disable
-5 5 -5 5 µA
Output high
voltage
VOH lOH = -5mA
2.4 - 2.4 - V
Output low
voltage
VOL lOL = + 4.2mA
- 0.4 - 0.4 V
Notes :
1. lCC is specified as an average current. It depends on output loading condition and cycle rate when
the device is selected. lCC max is specified at the output open condition.
2. Address can be changed once or less while RAS = VIL.
3. For lCC4, address can be changed once or less within one Fast page mode cycle time.
Document : 1G5-0142
Rev.1
Page 7

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부품번호상세설명 및 기능제조사
VG26V17400EJ-5

4/194/304 x 4 - Bit CMOS Dynamic RAM

Vanguard International Semiconductor
Vanguard International Semiconductor
VG26V17400EJ-6

4/194/304 x 4 - Bit CMOS Dynamic RAM

Vanguard International Semiconductor
Vanguard International Semiconductor

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