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부품번호 | VG26V17405J-6 기능 |
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기능 | 4/194/304 x 4 - Bit CMOS Dynamic RAM | ||
제조업체 | Vanguard International Semiconductor | ||
로고 | |||
VIS
Description
VG26(V)(S)17405FJ
4,194,304 x 4 - Bit
CMOS Dynamic RAM
The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access
mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
5V only or 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup,
portable electronic application. A new refresh feature called “self-refresh” is supported and very slow CBR
cycles are being performed. lt is packaged in JEDEC standard 26/24-pin plastic SOJ.
Features
• Single 5V( ±10%) or 3.3V(+10%,-5%) only power supply
• High speed t RAC acess time: 50/60ns
• Low power dissipation
- Active wode : 5V version 660/605 mW (Mas)
3.3V version 432/396 mW (Mas)
- Standby mode: 5V version 1.375 mW (Mas)
3.3V version 0.54 mW (Mas)
• Extended - data - out(EDO) page mode access
• I/O level: TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
• 2048 refresh cycle in 32 ms(Std.) or 128 ms(S-version)
• 4 refresh modesh:
- RAS only refresh
- CAS - before - RAS refresh
- Hidden refresh
- Self-refresh(S-version)
Document:1G5-0162
Rev.1
Page 1
VIS
VG26(V)(S)17405FJ
4,194,304 x 4 - Bit
CMOS Dynamic RAM
TRUTH TABLE
FUNCTION
STANDBY
RAS
H
READ
WRITE: (EARLY WRITE )
READ WRITE
L
L
L
EDO-PAGE-
MODE READ
1st Cycle
2nd Cycle
L
L
EDO-PAGE 1st Cycle
MODE WRITE
2nd Cycle
L
L
EDO-
1st Cycle
PAGE-MODE
READ-WRITE 2nd Cycle
L
L
HIDDEN
REFRESH
READ
WRITE
L→H→ L
L→H→ L
RAS-ONLY REFRESH
L
CBR REFRESH
H→L
Notes: 1. EARLY WRITE only.
CAS
H→X
L
L
L
H→L
H→L
H→L
H→L
H→L
H→L
L
L
H
L
ADDRESSES
WE OE ROW COL
DQS
X X X X High-Z
H
L
H→L
H
L
X
L→H
L
ROW
ROW
ROW
ROW
COL Data-Out
COL Data-ln
COL Data-Out,Data-ln
COL Data-Out
H L n/a COL Data-Out
L X ROW COL Data-In
L X n/a COL Data-In
H → L L → H ROW
H → L L → H n/a
H L ROW
COL Data-Out, Data-In
COL Data-Out, Data-In
COL Data-Out
L X ROW COL Data-In
X X ROW n/a High-Z
H X X X High-Z
Notes
1
Document:1G5-0162
Rev.1
Page 4
4페이지 VIS
VG26(V)(S)17405FJ
4,194,304 x 4 - Bit
CMOS Dynamic RAM
DC Characteristics ; 5-Volt Version (Cont.)
(Ta = 0 to + 70°C, VCC = + 5V ±10 %,VSS = 0V)
Parameter
Input leakage current
Output leakage current
Output high Voltage
Output low voltage
Symbol
ILI
ILO
VOH
VOL
Test Conditions
0V ≤ VIN ≤ VCC + 0.5V
0V ≤ VOUT ≤ VCC + 0.5V
Dout = Disable
IOH = - 5mA
IOL = + 4.2mA
VG26(V)(S) 17405
-5 -6
Min Max Min Max Unit Notes
-5 5 -5 5 µA
-5 5 -5 5 µA
2.4 - 2.4 - V
- 0.4
- 0.4 V
Notes:
1. ICC is specified as an average current. It depends on output loading condition and cycle rate when the
device is selected. ICC max is specified at the output open condition.
2. Address can be changed once or less while RAS = VIL.
3. For ICC4, address can be changed once or less within one EDO page mode cycle time.
Document:1G5-0162
Rev.1
Page 7
7페이지 | |||
구 성 | 총 27 페이지수 | ||
다운로드 | [ VG26V17405J-6.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
VG26V17405J-5 | 4/194/304 x 4 - Bit CMOS Dynamic RAM | Vanguard International Semiconductor |
VG26V17405J-6 | 4/194/304 x 4 - Bit CMOS Dynamic RAM | Vanguard International Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |