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VG26V18165CJ-5 데이터시트 PDF




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부품번호 VG26V18165CJ-5 기능
기능 1/048/576 x 16 - Bit CMOS Dynamic RAM
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로고 Vanguard International Semiconductor 로고


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VG26V18165CJ-5 데이터시트, 핀배열, 회로
VIS
Description
VG26(V)(S)18165C
1,048,576 x 16 - Bit
CMOS Dynamic RAM
The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access
mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
5V only or 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup,
portable electronic application. A new refresh feature called “self-refresh” is supported and very slow CBR
cycles are being performed. lt is packaged in JEDEC standard 42-pin plastic SOJ.
Features
• Single 5V(±10 %) or 3.3V(±10 %) only power supply
• High speed tRAC acess time: 50/60ns
• Low power dissipation
- Active wode : 5V version 660/605 mW (Mas)
3.3V version 432/396 mW (Mas)
- Standby mode: 5V version 1.375 mW (Mas)
3.3V version 0.54 mW (Mas)
• Extended - data - out(EDO) page mode access
• I/O level: TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
• 1024 refresh cycle in 16 ms(Std.) or 128 ms(S-version)
• 4 refresh modes:
- RAS only refresh
- CAS - before - RAS refresh
- Hidden refresh
- Self-refresh(S-version)
Document:1G5-0147
Rev.1
Page 1




VG26V18165CJ-5 pdf, 반도체, 판매, 대치품
VIS
VG26(V)(S)18165C
1,048,576 x 16 - Bit
CMOS Dynamic RAM
TRUTH TABLE
FUNCTION
STANDBY
READ : WORD
READ : LOWER BYTE
RAS
H
L
L
READ: UPPER BYTE
L
WRITE: WORD
(EARLY WRITE)
WRITE: LOWER
BYTE (EARLY)
WRITE : UPPER
BYTE (EARLY)
READ WRITE
L
L
L
L
PAGE-MODE
READ
1st Cycle
2nd Cycle
L
L
PAGE-MODE
WRITE
1st Cycle
2nd Cycle
L
L
PAGE-MODE
READ-
WRITE
1st Cycle
2nd Cycle
L
L
HIDDEN
REFRESH
READ
WRITE
RAS-ONLY REFRESH
CBR REFRESH
LHL
LHL
L
HL
LCAS
HX
L
L
H
L
L
H
L
HL
HL
HL
HL
HL
HL
L
L
H
L
UCAS
HX
L
H
WE
X
H
H
OE
X
L
L
L HL
L LX
H LX
L LX
L HL LH
HL
H
L
HL
H
L
HL
L
X
HL
L
X
HL HL LH
HL
L
HL LH
HL
L LX
H XX
L HX
ADDRESSES
ROW COL
DQS
X X High-Z
Notes
ROW
ROW
ROW
ROW
COL Data-Out
COL Lower Byte: Data-Out
Upper Byte: High-Z
COL Lower Byte: High-Z
Upper Byte: Data-Out
COL Data-In
ROW
ROW
ROW
ROW
n/a
ROW
n/a
ROW
n/a
ROW
ROW
ROW
X
COL Lower Byte: Data-In
Upper Byte: High-Z
COL Lower Byte: High-Z
Upper Byte: Data-In
COL Data-Out, Data-In
COL Data-Out
COL Data-Out
COL Data-In
COL Data-In
COL Data-Out, Data-In
COL Data-Out, Data-In
COL Data-Out
COL Data-In
n/a High-Z
X High-Z
1,2
2
2
1
1
1,2
1,2
2
1,3
4
Notes: 1. These WRITE cycles may also be BYTE WRITE cycles (either LCAS or UCAS active).
2. These READ cycles may also be BYTE READ cycles (either LCAS or UCAS active).
3. EARLY WRITE only.
4. At least one of the two CAS signals must be active (LCAS or UCAS).
Document:1G5-0147
Rev.1
Page 4

4페이지










VG26V18165CJ-5 전자부품, 판매, 대치품
VIS
VG26(V)(S)18165C
1,048,576 x 16 - Bit
CMOS Dynamic RAM
DC Characteristics ; 5-Volt Version (Cont.)
(Ta = 0 to + 70°C, VCC = + 5V ±10 %,VSS = 0V)
Parameter
Input leakage current
Output leakage current
Output high Voltage
Output low voltage
Symbol
ILI
ILO
VOH
VOL
Test Conditions
0V VIN VCC + 0.5V
0V VOUT VCC + 0.5V
Dout = Disable
IOH = - 5mA
IOL = + 4.2mA
VG26(V)(S)18165C
-5 -6
Min Max Min Max Unit Notes
-5 5 -5 5 µA
-5 5 -5 5 µA
2.4 - 2.4 - V
- 0.4
- 0.4 V
Notes:
1. ICC is specified as an average current. It depends on output loading condition and cycle rate when the
device is selected. ICC max is specified at the output open condition.
2. Address can be changed once or less while RAS = VIL.
3. For ICC4, address can be changed once or less within one EDO page mode cycle time.
Document:1G5-0147
Rev.1
Page 7

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