|
|
Datasheet VHB25-28S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | VHB25-28S | NPN SILICON RF POWER TRANSISTOR VHB25-28S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB25-28S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
• • • Omnigold™ Metalization System
B
ØC
D
H
I J
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 4.0 A 65 V 35 V 4.0 V 40 W @ TC = 25 OC - |  Advanced Semiconductor | transistor |
VHB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | VHB1-12T | NPN SILICON RF POWER TRANSISTOR VHB1-12T
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB1-12T is Designed for
PACKAGE STYLE TO-39
B ØA 45° C
FEATURES:
• • • Omnigold™ Metalization System
ØD E
MAXIMUM RATINGS
IC VCBO VCEO VCER VEBO PDISS TJ TSTG θ JC
O
F
400 mA (MAX) 40 V 20 V 40 V 2.0 V 3.5 W @ TC = 25 Advanced Semiconductor transistor | | |
| 2 | VHB1-28T | NPN SILICON RF POWER TRANSISTOR VHB1-28T
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB1-28T is Designed for
PACKAGE STYLE TO-39
B ØA 45° C
FEATURES:
• • • Omnigold™ Metalization System
ØD E
F
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC
O
G
H
0.4 A 55 V 30 V 3.5 V 5 W @ TC = 25 C -65 C to +20 Advanced Semiconductor transistor | | |
| 3 | VHB10-12F | NPN SILICON RF POWER TRANSISTOR VHB10-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB10-12F is Designed for
PACKAGE STYLE .380 4L FLG
B .112 x 45° A Ø.125 NOM. FULL R J .125
FEATURES:
• • • Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
C D F E H I
2.0 A 36 V Advanced Semiconductor transistor | | |
| 4 | VHB10-12S | NPN SILICON RF POWER TRANSISTOR VHB10-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB10-12S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
• • • Omnigold™ Metalization System
B
ØC
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC 2.0 A 36 V 18 V 36 V 4.0 V 20 W @ TC = 25 C -65 Advanced Semiconductor transistor | | |
| 5 | VHB10-28F | NPN SILICON RF POWER TRANSISTOR VHB10-28F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB10-28F is Designed for
PACKAGE STYLE .380 4L FLG
.112 x 45° A Ø.125 NOM. FULL R J .125
FEATURES:
• • • Omnigold™ Metalization System
B
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
C D F E H I
1.0 A 65 V Advanced Semiconductor transistor | | |
| 6 | VHB10-28S | NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor transistor | | |
| 7 | VHB100-12 | NPN SILICON RF POWER TRANSISTOR VHB100-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB100-12 is Designed for
PACKAGE STYLE .500 6L FLG
C A 2x ØN FULL R D
FEATURES:
• • • Omnigold™ Metalization System
B G .725/18,42 F
E
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
K H DIM MINIMUM
inches / Advanced Semiconductor transistor | |
| Esta página es del resultado de búsqueda del VHB25-28S. Si pulsa el resultado de búsqueda de VHB25-28S se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |