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PDF US1B Data sheet ( Hoja de datos )

Número de pieza US1B
Descripción SURFACE MOUNT ULTRA FAST SWITCHING RECTIFIER
Fabricantes Shanghai Sunrise Electronics　
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No Preview Available ! US1B Hoja de datos, Descripción, Manual

SHANGHAI SUNRISE ELECTRONICS CO., LTD.
US1A THRU US1M
SURFACE MOUNT ULTRA
FAST SWITCHING RECTIFIER
TECHNICAL
SPECIFICATION
VOLTAGE: 50 TO 1000V CURRENT: 1.0A
FEATURES
• Ideal for surface mount pick and
place application
• Low profile package
• Built-in strain relief
• High surge capability
• Glass passivated chip
• Ultra fast recovery for high efficiency
• High temperature soldering guaranteed:
260oC/10sec/at terminal
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
SMA/DO-214AC
B
AC
F
G
D
H
ABCD
MAX. .110(2.79) .177(4.50) .058(1.47) .012(0.305)
MIN. .100(2.54) .157(3.99) .052(1.32) .006(0.152)
E FGH
MAX. .208(5.28) .090(2.29) .008(0.203) .060(1.52)
MIN. .194(4.93) .078(1.98) .004(0.102) .030(0.76)
Dimensions in inches and (illimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
SYMBOL
US
1A
US
1B
US
1D
US
1G
US
1J
US
1K
US
1M
UNITS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(TL=100oC)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
(at rated DC blocking voltage)
Maximum Reverse Recovery Time
Ta=25oC
Ta=100oC
(Note 1)
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
IR
trr
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
1.0
V
V
V
A
30 A
1.0
50
1.4
5.0
200
1.7
75
V
µA
µA
nS
Typical Junction Capacitance
(Note 2) CJ
20
Typical Thermal Resistance
(Note 3) Rθ(ja)
32
Storage and Operation Junction Temperature TSTG,TJ
-50 to +150
Note:
1.Reverse recovery condition IF=0.5A, IR=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0Vdc
3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
10
pF
oC/W
oC
http://www.sse-diode.com

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