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부품번호 | US1BB 기능 |
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기능 | SURFACE MOUNT ULTRA FAST SWITCHING RECTIFIER | ||
제조업체 | Shanghai Sunrise Electronics | ||
로고 | |||
전체 1 페이지수
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
US1AB THRU US1MB
SURFACE MOUNT ULTRA
FAST SWITCHING RECTIFIER
TECHNICAL
SPECIFICATION
VOLTAGE: 50 TO 1000V CURRENT: 1.0A
FEATURES
• Ideal for surface mount pick and
place application
• Low profile package
• Built-in strain relief
• High surge capability
• Glass passivated chip
• Ultra fast recovery for high efficiency
• High temperature soldering guaranteed:
260oC/10sec/at terminal
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
SMB/DO-214AA
B
AC
F
G
D
H
ABCD
MAX. .155(3.94) .180(4.57) .083(2.11) .012(0.305)
MIN. .130(3.30) .160(4.06) .077(1.96) .006(0.152)
E FGH
MAX. .220(5.59) .096(2.44) .008(0.203) .060(1.52)
MIN. .205(5.21) .084(2.13) .004(0.102) .030(0.76)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
SYMBOL
US1
AB
US1
BB
US1
DB
US1
GB
US1
JB
US1
KB
US1
MB
UNITS
Maximum Repetitive Peak Reverse Voltage
VRRM
50 100 200 400 600 800 1000 V
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(TL=100oC)
VRMS
VDC
IF(AV)
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
1.0
V
V
A
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
IFSM
30
A
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
(at rated DC blocking voltage)
Ta=25oC
Ta=100oC
Maximum Reverse Recovery Time (Note 1)
VF
IR
trr
1.0
50
1.4
5.0
200
1.7
75
V
µA
µA
nS
Typical Junction Capacitance
(Note 2)
Typical Thermal Resistance
(Note 3)
Storage and Operation Junction Temperature
Note:
CJ
Rθ(ja)
TSTG,TJ
20
32
-50 to +150
10
pF
oC/W
oC
1.Reverse recovery condition IF=0.5A, IR=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0Vdc
3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
http://www.sse-diode.com
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구 성 | 총 1 페이지수 | ||
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |