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Datasheet TVV010 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | TVV010 | NPN SILICON RF POWER TRANSISTOR TVV010
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVV010 is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
B
D S
ØC
FEATURES:
• • • Omnigold™ Metalization System
S G
H I J
D
MAXIMUM RATINGS
IC VCB VCE PDISS TJ TSTG θ JC 10 A 60 V 35 V 140 W @ TC = 25 OC -65 OC to +20 |  Advanced Semiconductor | transistor |
TVV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | TVV005 | NPN SILICON RF POWER TRANSISTOR TVV005
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVV005 is Designed for
PACKAGE STYLE .280 4L STUD
A 45°
FEATURES:
• • • Omnigold™ Metalization System
B
D S G
D C J E I
S
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 4.0 A 55 V 30 V 4.0 V 50 W @ TC = 25 C -65 OC to Advanced Semiconductor transistor | | |
| 2 | TVV007 | NPN SILICON RF POWER TRANSISTOR TVV007
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVV007 is Designed for
D
PACKAGE STYLE .500 6L FLG
C A 2x ØN FULL R
FEATURES:
• • • Omnigold™ Metalization System
DIM B G .725/18,42 F K H MINIMUM
inches / mm
E
M L
J
I
MAXIMUM
inches / mm
MAXIMUM RATINGS
IC VCB VCE PDISS Advanced Semiconductor transistor | | |
| 3 | TVV010 | NPN SILICON RF POWER TRANSISTOR TVV010
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVV010 is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
B
D S
ØC
FEATURES:
• • • Omnigold™ Metalization System
S G
H I J
D
MAXIMUM RATINGS
IC VCB VCE PDISS TJ TSTG θ JC 10 A 60 V 35 V 140 W @ TC = 25 OC -65 OC to +20 Advanced Semiconductor transistor | | |
| 4 | TVV014 | NPN SILICON RF POWER TRANSISTOR TVV014
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVV014 is Designed for
D
PACKAGE STYLE .500 6L FLG
C A 2x ØN FULL R
FEATURES:
• • • Omnigold™ Metalization System
DIM B G .725/18,42 F K H MINIMUM
inches / mm
E
M L
J
I
MAXIMUM
inches / mm
MAXIMUM RATINGS
IC VCB VCE PDISS Advanced Semiconductor transistor | | |
| 5 | TVV014A | NPN SILICON RF POWER TRANSISTOR TVV014A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVV014A is Designed for
PACKAGE STYLE .500 6L FLG
C A 2x ØN FULL R D
FEATURES:
• • • Omnigold™ Metalization System
B G .725/18,42 F
E
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 10 A 60 V 35 V 4.0 V 140 W @ TC = 25 Advanced Semiconductor transistor | | |
| 6 | TVV020 | NPN SILICON RF POWER TRANSISTOR TVV020
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVV020 is Designed for
PACKAGE STYLE .500 4L STUD
45° A
D
FEATURES:
• • • Omnigold™ Metalization System
B ØC D E
S G
S
J I SEATING PLANE
MAXIMUM RATINGS
IC VCEO VCES VEBO PDISS TJ TSTG θ JC 8.0 A 35 V 60 V 4.0 V 140 W @ Advanced Semiconductor transistor | | |
| 7 | TVV030 | NPN SILICON RF POWER TRANSISTOR TVV030
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVV030 is Designed for
PACKAGE STYLE .500 6L FLG
C A 2x ØN FULL R D
FEATURES:
• • • Omnigold™ Metalization System
B G .725/18,42 F
E
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 16 A 60 V 30 V 4.0 V 150 W @ TC = 25 O Advanced Semiconductor transistor | |
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