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부품번호 | TYN1016 기능 |
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기능 | 16A SCRs | ||
제조업체 | STMicroelectronics | ||
로고 | |||
®
STANDARD
TN16 and TYNx16 Series
16A SCRs
MAIN FEATURES:
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
16
600 to 1000
25
Unit
A
V
mA
DESCRIPTION
The TYN / TN16 SCR Series is suitable for
general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
A
KA
G
D2PAK
(TN16-G)
A
G
K
A
K
A
G
TO-220AB
(TYN)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
IT(RMS) RMS on-state current (180° conduction angle)
T(AV) Average on-state current (180° conduction angle)
ITSM
Non repetitive surge peak on-state
current
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
Tc = 110°C
Tc = 110°C
Tj = 25°C
Tj = 25°C
Value
16
10
200
190
180
Tj = 125°C
50
Tj = 125°C
Tj = 125°C
4
1
- 40 to + 150
- 40 to + 125
5
Unit
A
A
A
A2S
A/µs
A
W
°C
V
April 2002 - Ed: 4A
1/7
TN16 and TYNx16 Series
Fig. 1: Maximum average power dissipation
versus average on-state current.
Fig. 2-1: Average and D.C. on-state current
versus case temperature.
P(W)
16
α = 180°
14
12
10
8
6
4
2
0
02
IT(av)(A)
468
360°
α
10
12
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (copper surface
under tab: S = 1 cm² (for D²PAK).
IT(av)(A)
18
16
14
12
10
8
6
4
2
0
0 25
D.C.
α =180°
Tcase( °C)
50 75
100 125
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
IT(av)(A)
4.0
3.5
3.0 D.C.
2.5
2.0 α = 180°
1.5
1.0
0.5
0.0
0
25
Tamb(°C)
50 75
100 125
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.
K = [Zth/Rth]
1.00
Zth(j-c)
0.10
Zth(j-a)
0.01
1E-3
1E-2
tp(s)
1E-1 1E+0
1E+1
1E+2 5E+2
Fig. 5: Surge peak on-state current versus
number of cycles.
IGT,IH,IL [Tj] / IGR,IH,IL [Tj = 25 °C]
2.5
2.0
IGT
1.5
IH & IL
1.0
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120 140
ITSM(A)
200
180
160
140
120
100
80
60
40
20
0
1
Non repetitiv e
Tj initial = 25 °C
Repetitiv e
Tcase = 110 °C
Number of cycles
10 100
tp = 10ms
One cycle
1000
4/7
4페이지 PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
BC
b2
L
I
A
F
l4
a1
l3
l2
a2
c2
b1
e
M
c1
TN16 and TYNx16 Series
DIMENSIONS
REF.
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 15.20
15.90 0.598
0.625
a1 3.75
0.147
a2 13.00
14.00 0.511
0.551
B 10.00
10.40 0.393
0.409
b1 0.61
0.88 0.024
0.034
b2 1.23
1.32 0.048
0.051
C 4.40
4.60 0.173
0.181
c1 0.49
0.70 0.019
0.027
c2 2.40
2.72 0.094
0.107
e 2.40
2.70 0.094
0.106
F 6.20
6.60 0.244
0.259
I 3.75
3.85 0.147
0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65
2.95 0.104
0.116
l2 1.14
1.70 0.044
0.066
l3 1.14
1.70 0.044
0.066
M 2.60
0.102
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |