Datasheet.kr   

U2705 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 U2705은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 U2705 자료 제공

부품번호 U2705 기능
기능 HEXFET POWER MOSFET
제조업체 International Rectifier
로고 International Rectifier 로고


U2705 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 10 페이지수

미리보기를 사용할 수 없습니다

U2705 데이터시트, 핀배열, 회로
PD- 91317C
IRLR/U2705
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Ultra Low On-Resistance
l Surface Mount (IRLR2705)
l Straight Lead (IRLU2705)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
G
D
VDSS = 55V
RDS(on) = 0.040
ID = 28A…
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
D-Pak
TO-252AA
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
28
20
110
68
0.45
± 16
110
16
6.8
5.0
-55 to + 175
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
–––
–––
–––
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
Max.
2.2
50
110
I-Pak
TO-251AA
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
4/1/03




U2705 pdf, 반도체, 판매, 대치품
IRLR/U2705
1400
1200
1000
800
600
Ciss
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
400
Crss
200
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
15
I D = 16A
12
V DS = 44V
V DS = 28V
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0A
0 4 8 12 16 20 24 28 32
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175°C
TJ = 25°C
10
1 VGS = 0V A
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10µs
100µs
10
1ms
TC = 25°C
TJ = 175°C
Single Pulse
1
1
10
10ms
A
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com

4페이지










U2705 전자부품, 판매, 대치품
IRLR/U2705
D.U.T
+
‚
-

RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
- „+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
VDD
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
www.irf.com
7

7페이지


구       성 총 10 페이지수
다운로드[ U2705.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
U2703

Power MOSFET ( Transistor )

International Rectifier
International Rectifier
U2705

HEXFET POWER MOSFET

International Rectifier
International Rectifier

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵