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U4285BM-AFSG3 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 U4285BM-AFSG3
기능 AM / FM - PLL
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U4285BM-AFSG3 데이터시트, 핀배열, 회로
AM / FM - PLL
U4285BM
Description
The U4285BM is an integrated circuit in BICMOS
technology for frequency synthesizers. It performs all the
functions of a PLL radio tuning system and is controlled
by an I2C bus. The device is designed for all frequency
synthesizer applications in radio receivers, as well as
RDS ( Radio Data System ) applications.
Features
D Reference oscillator up to 15 MHz
D Two programmable 16 bit dividers
adjustable from 2 to 65535
D Fine tuning steps:
yAM 1 kHz
yFM 2 kHz
D 4 programmable switching outputs
(open drain up to 15 V)
D Few external component required due to
integrated loop-push-pull stage for AM/FM
D High signal/ noise ratio
Ordering Information
Extended Type Number
U4285BM-AFS
U4285BM-AFSG3
Package
SSO20 plastic
SSO20 plastic
Remarks
Taping according to IEC-286-3
Block Diagram
OSCIN 18
OSCOUT
19
SCL 2
SDA 3
AS 4
Oscillator
I2C bus
interface
FMOSC 9
AMOSC 11
AM/FM
switch
10
GND2
R-divider
SWO1 SWO2 SWO3 SWO4
5678
Switching outputs
Phase
detector
Current
sources
N-divider
1
VDD
Figure 1.
20
GND1
14 PDAM
15 PDAMO
16 VA
17 C
12 PDFMO
13 PDFM
95 10120
TELEFUNKEN Semiconductors
Rev. A3, 14-May-97
1 (10)




U4285BM-AFSG3 pdf, 반도체, 판매, 대치품
U4285BM
Transmission Protocol
MSB
LSB
S Address A
A7 A0
Subaddress
R-divider
A Data 0 A Data 1 A Data 2 A P
MSB
LSB
S Address A
A7 A0
Subaddress
N–divider
S = Start P = Stop A = Acknowledge
A Data 3 A Data 4 A P
A
Figure 3.
Absolute Maximum Ratings
Parameters
Supply voltage
Pin 1
Input voltage
Pins 2, 3, 4, 9, 11, 18 and 19
Output current
Pins 3, 5, 6, 7 and 8
Output drain voltage
Pins 5, 6, 7 and 8
WAnalogue supply voltage
Pin 16
with 220 seriell resistance 2 minutes 1
Output current
Pins 12 and 15
Ambient temperature range
Storage temperature range
Junction temperature
Electrostatic handling (modified MIL STD 883 D
method 3015.7: all supply pins connected together)
1 corresponding our application circuit (page 8)
Symbol
VDD
VI
IO
VOD
VA
VA
IAO
Tamb
Tstg
" Tj
VESD
Thermal Resistance
Junction ambient
Parameters
Symbol
RthJA
Value
–0.3 to +6
–0.3 to VDD + 0.3
–1 to +5
15
6 to 15
24
–1 to +20
–30 to +85
–40 to +125
125
1000
Value
160
Unit
V
V
mA
V
V
V
mA
_C
_C
_C
V
Unit
K/W
4 (10)
TELEFUNKEN Semiconductors
Rev. A3, 14-May-97

4페이지










U4285BM-AFSG3 전자부품, 판매, 대치품
100
T = 85°C
VDD =
5.5 V
10 5.0 V
4.5 V
U4285BM
100
T = –30°C
VDD =
5.5 V
10 5.0 V
4.5 V
13353
1
0.1
1.0 10.0
fiAM ( MHz )
100.0
13356
1
0.1
Figure 6. AM input sensitivity
1.0 10.0
fiAM ( MHz )
100.0
Application Circuit
6 to 15 V 110
100 m 110
16 V
100 m
6.3 V
27 p 27 p
4 MHz
20 19 18
17 16
C1
*
R1
*
15 14
3k
C5
*
R2*
C2
*
100 n
C6*
AMOSC FMOSC
2.2 n
13 12 11
C3 U4285BM
100 n
C4
100
m
6.3 V
1 2 3 4 5 6 7 8 9 10
27
5V
* Values depend on the step
12 k 12 k
frequency and used varicaps
1n
Figure 7.
95 10123
TELEFUNKEN Semiconductors
Rev. A3, 14-May-97
7 (10)

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부품번호상세설명 및 기능제조사
U4285BM-AFSG3

AM / FM - PLL

TEMIC Semiconductors
TEMIC Semiconductors

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