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U9014 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 U9014
기능 Advanced Power MOSFET
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U9014 데이터시트, 핀배열, 회로
Advanced Power MOSFET
SFR/U9014
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 µA (Max.) @ VDS = -60V
n Lower RDS(ON) : 0.362 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
O2
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
O1
O1
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25oC) *
Total Power Dissipation (TC=25oC)
Linear Derating Factor
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
BVDSS = -60 V
RDS(on) = 0.5
ID = -5.3 A
D-PAK I-PAK
2
11
3
2
3
1. Gate 2. Drain 3. Source
Value
-60
-5.3
-3.7
21
±30
120
-5.3
2.4
-5.5
2.5
24
0.19
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/oC
oC
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
Junction-to-Case
--
RθJA
Junction-to-Ambient *
--
RθJA Junction-to-Ambient
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
5.21
50
110
Units
oC/W
Rev. C




U9014 pdf, 반도체, 판매, 대치품
SFR/U9014
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9 @ Notes :
1. VGS = 0 V
2. ID = -250 µA
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC]
P-CHANNEL
POWER MOSFET
Fig 8. On-Resistance vs. Temperature
2.5
2.0
1.5
1.0
@ Notes :
0.5 1. VGS = -10 V
2. ID = -3.4 A
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC]
Fig 9. Max. Safe Operating Area
102 Operation in This Area
is Limited by R DS(on)
101
@ Notes :
100 1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
0.1 ms
1 ms
10 ms
DC
10-1
100
101
-VDS , Drain-Source Voltage [V]
102
Fig 10. Max. Drain Current vs. Case Temperature
6
5
4
3
2
1
0
25 50 75 100 125 150
Tc , Case Temperature [oC]
Fig 11. Thermal Response
101
D=0.5
100 0.2
0.1
0.05
0.02
0.01
10- 1
single pulse
@ Notes :
1.
Z
θ
J
C
(t)=5.21
o C/W
Max.
2. Duty Factor, D=t1 /t2
3.
TJ
M
-TC
=PD
M
*Z
θ
J
C
(t)
P.DM
t
1.
t2.
10- 5
10- 4
10- 3
10- 2
10- 1
100
t1 , Square Wave Pulse Duration [sec]
101

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U9014 전자부품, 판매, 대치품
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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FACT™
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ActiveArray™ FACT Quiet Series™ ISOPLANAR™
POP™
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Bottomless™ FASTâ
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SuperSOT™-6
CROSSVOLT™ FRFET™
MicroPak™
QFET™
SuperSOT™-8
DOME™
GlobalOptoisolator™ MICROWIRE™
QS™
SyncFET™
EcoSPARK™ GTO™
MSX™
QT Optoelectronics™ TinyLogic™
E2CMOSTM
HiSeC™
MSXPro™
Quiet Series™
TruTranslation™
EnSignaTM
I2
OCX™
Across the board. Around the world.™ OCXPro™
The Power Franchise™
OPTOLOGICâ
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reasonably expected to result in significant injury to the
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I1

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링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
U9014

Advanced Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor

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