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TSI62B1 데이터시트 PDF




STMicroelectronics에서 제조한 전자 부품 TSI62B1은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 TSI62B1 기능
기능 TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE
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TSI62B1 데이터시트, 핀배열, 회로
®
Application Specific Discretes
A.S.D.
TSIxxB1
TERMINAL SET INTERFACE
PROTECTION AND DIODE BRIDGE
MAIN APPLICATION
Telecom equipment requiring combined
protection against transient overvoltages and
rectification by diode bridge :
Telephone set
Base station for cordless set
Fax machine
Modem
Caller Id equipment
Set top box
DESCRIPTION
The TSIxxB1 provides the diode bridge and the
crowbar protection function that can be found in
most of telecom terminal equipment.
Integrated monolithically within a SO8 package,
this ASDdevice allows space saving on the
board and greater reliability.
FEATURES
STAND-OFF VOLTAGE FROM 62V TO 265V
PEAK PULSE CURRENT : 30 A (10/1000 µs)
MAXIMUM DC CURRENT : IF = 0.2 A
HOLDING CURRENT :150 mA
IN ACCORDANCE WITH THE FOLLOWING
STANDARDS :
CCITT K17 - K20 10/700 µs
5/310 µs
1.5 kV
38A
VDE 0433
10/700 µs
2 kV
5/310 µs
40A(*)
CNET
0.5/700 µs
1.5 kV
0.2/310 µs
38A
Bellcore
TR-NWT-000974: 10/1000 µs
10/1000 µs
1 kV
30A(*)
FCC Part 68
2/10 µs
2/10 µs
2.5 kV
75A (*)
MIL STD883C Method 3015-6
(*) with series resistor or PTC.
TM: ASD is trademarks of SGS-THOMSON Microelectronics.
January 1998 - Ed: 3
SO8
SCHEMATIC DIAGRAM
18
27
36
45
BENEFITS
Diode bridge for polarity guard and crowbar
protection within one device.
Single chip for greater reliability
Reduces component count versus discrete
solution
Saves space on the board
1/9




TSI62B1 pdf, 반도체, 판매, 대치품
TSIxxB1
TEST # 1
LIGHTNING SIMULATION
This test concerns the 10/700 µs waveform surge,
± 1.5 kV.
Fig. 2 : 10/700 µs waveform surge generator circuit
The surge generator used for the test has the
following circuitry (fig.2).
ΩΩ
The behaviour of the TSI200B1 to this lightning surge is given below (fig. 3).
Fig. 3 : Voltage across the TSI200B1 at the + and - terminations and current throught it
for a 1.5 kV positive surge (fig.3a) and negative surge (fig. 3b)
These curves show the peak voltage the surge
generates across the TSI200B1 + and -
terminations. This lasts a short time (2 µs) and
after, as the internal protection gehaves like a short
circuit. The voltage drop across the TSIxxB1
becomes a few volts. In the meanwhile all the
surge current flows in the protection.
As far as the 10/700 µs waveform surge test is
concerned,the TSIxxB1 withstand the ± 1.5 kV
test.
4/9

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TSI62B1 전자부품, 판매, 대치품
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C)
1 - PROTECTION DEVICES PARAMETERS
IRM @ VRM
Type
µA V
max.
TSI62B1
1 50
5 62
TSI180B1
1 50
5 180
TSI200B1
1 50
5 200
TSI220B1
1 50
5 220
TSI265B1
1 50
5 265
Note 1 : Measured at 50 Hz, one cycle
Note 2 : See test cricuit
Note 3 : VR = 0V, F = 1MHz, between pins 1 and 8.
VBO @ IBO
note1
V
max.
90
250
290
330
380
IH
note2
mA
min.
150
150
150
150
150
2 - DIODE BRIDGE PARAMETERS
Symbol
VF
(for one diode)
IF = 20 mA
IF = 100 mA
Test condition
TSIxxB1
IBO
note1
mA mA
min. max.
50 400
C
note3
pF
typ.
200
50 400 200
50 400 200
50 400 200
50 400 200
Value
0.9
1.1
Unit
V
V
FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT : GO - NO GO TEST
VBAT = - 48 V
R
D.U.T.
- VP
Surge generator
This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional
test circuit.
TEST PROCEDURE :
1) Adjust the current level at the IH value by short circuiting the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs.
3) The D.U.T will come back off-state within a duration of 50 ms max.
7/9

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TSI62B1

TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE

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