(PDF) TPV590 Datasheet - NPN SILICON RF POWER TRANSISTOR

Número de pieza	TPV590
Descripción	NPN SILICON RF POWER TRANSISTOR
Fabricantes	Advanced Semiconductor
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No Preview Available ! TPV590 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TPV590 is a Common Emitter Device Designed for Class A High Linearity Amplifier Applications in TV Band IV-V Transmitters. FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting • High Gain PACKAGE STYLE 205 4L STUD MAXIMUM RATINGS IC 300 mA VCBO PDISS TJ T STG θ JC 45 V 5.3 W @ TC = 25 OC -65 OC to +200 OC -65 OCto +200 OC 33 OC/W 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS BVCBO IC = 1.0mA BVCER IC = 10 mA RBE = 10 Ω BVEBO IE = 1.0 mA hFE VCE = 5 V IC = 100 mA MINIMUM TYPICAL MAXIMUM 45 45 3.5 20 UNITS V V V --- COB VCB = 28 V f = 1.0 MHz 2.0 3.0 pF PG IMD3 VCE = 20 V VCE = 20 V Vision = -8dB IC = 150 mA P = 0.5 W OUT f = 860 MHz IC = 150 mA Pref = 0.5 W Chroma = -16dB Sound =-10 dB 13 -58 14 dB dBc A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 1 page

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PDF TPV590 Data sheet ( Hoja de datos )