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PDF TPV595A Data sheet ( Hoja de datos )
| Número de pieza | TPV595A | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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TPV595A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The TPV595A is Designed for Class
AB Push Pull, Common Emitter from
470 to 860 MHz Applications.
FEATURES:
• Gold Metalization
• Emitter Ballast Resistors
• Internal Input Matching
MAXIMUM RATINGS
IC 2 x 2.6 A
VCB
PDISS
TJ
T STG
θ JC
45 V
65 W @ TC = 25 OC
-50 OC to +200 OC
-50 OC to +200 OC
2.5 OC/W
PACKAGE STYLE .250 BAL FLG
.020 x 45°
E
C
D
F
J
B A Collector - 2 places
Ø.130 NOM.
.050 x 45°
N
Emitter connected to flange
G
H
Base - 2 places
I
LM
K
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .060 / 1.52
B .055 / 1.40
.065 / 1.65
C .125 / 3.18
D .243 / 6.17
.255 / 6.48
E .630 / 16.00
.670 / 17.01
F .092 / 2.34
G .555 / 14.10
H .739 / 18.77
I .315 / 8.00
J .002 / 0.05
.565 / 14.35
.750 / 19.05
.327 / 8.31
.006 / 0.15
K .055 / 1.40
L .075 1.91
M
.065 / 1.65
.095 / 2.41
.190 / 4.83
N .245 / 6.22
.257 / 6.53
Order Code: ASI10835
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 40 mA
BVCER
IC = 20 mA
RBE = 51 Ω
BVCBO
IC = 20 mA
ICBO
VCB = 20 V
BVEBO
IE = 5 mA
hFE VCE = 20 V IC = 500 mA
MINIMUM TYPICAL MAXIMUM
25 28
40
45
5.0
3.0
10
UNITS
V
V
V
mA
V
--
COB VCB = 25 V
20 pF
PG
VCE = 25 V
IC = 2 x 900 mA
PREF = 14 W
8.5
9.5
dB
F = 860 MHz
IMD3
Vision = -8 dB Sound = -7 dB SB = -16 dB
-47 dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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| PDF Descargar | [ Datasheet TPV595A.PDF ] | |
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