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부품번호 | TPV8100B 기능 |
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기능 | NPN SILICON RF POWER TRANSISTOR | ||
제조업체 | Motorola Inc | ||
로고 | |||
전체 6 페이지수
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
The TPV8100B is designed for output stages in band IV and V TV transmitter
amplifiers. It incorporates high value emitter ballast resistors, gold metalliza-
tions and offers a high degree of reliability and ruggedness.
Including double input and output matching networks, the TPV8100B
features high impedances. It can easily operate in a full 470 MHz to 860 MHz
bandwidth in a single and simple circuit.
• To be used class AB for TV band IV and V.
• Specified 28 Volts, 860 MHz Characteristics
Output Power = 125 Watts (peak sync.)
Output Power = 100 Watts (CW)
Minimum Gain = 8.5 dB
• Specified 32 Volts, 860 MHz Characteristics
Output Power = 150 Watts (peak sync.)
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by TPV8100B/D
TPV8100B
150 W, 470 – 860 MHz
NPN SILICON
RF POWER TRANSISTOR
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ 25°C Case
Derate above 25°C
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, Rbe = 75 Ω)
V(BR)CER
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc)
V(BR)EBO
Collector–Base Breakdown Voltage
(IE = 20 mAdc)
V(BR)CBO
Collector–Emitter Leakage
(VCE = 28 V, Rbe = 75 Ω)
ICER
NOTE:
1. Thermal resistance is determined under specified RF operating condition.
Symbol
VCER
VCBO
VEBO
IC
PD
TJ
Tstg
Symbol
RθJC
Min
30
4
65
—
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
CASE 398–03, STYLE 1
Value
40
65
4
12
215
1.25
200
– 65 to +150
Max
0.8
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— 10 mA
(continued)
TPV8100B
1
TYPICAL VIDEO CHARACTERISTICS @ f = 800 MHz
VCE = 28 V
100
IRE
0
40
Black
VIDEO SIGNAL
150 150
100
TEST CONDITIONS:
STANDARD BLACK LEVEL
50 CHANNEL 61
ICQ = 2 x 50 mA
VCE = 28 V
20
2 4 6 8 10 12 14 16
Pin, INPUT POWER (WATTS)
Figure 5. Peak Output Power versus Peak
Input Power
100
TEST CONDITIONS:
STANDARD BLACK LEVEL
50 CHANNEL 61
ICQ = 2 x 300 mA
VCE = 28 V
20
2 4 6 8 10 12 14 16
Pin, INPUT POWER (WATTS)
Figure 6. Peak Output Power versus Peak
Input Power
TEST CONDITIONS:
DIFF. Gain, 10 Steps
Channel 61
VCE = 28 V
100
IRE
0
40
ICQ = 2 x 50 mA
%
100
90
80
70
60
50
40
30
20
10
0
ICQ = 2 x 150 mA
Pout = 100 W
Pout = 130 W
Pout = 100 W
Pout = 130 W
%
100
90
80
70
60
50
40
30
20
10
0
Figure 7. Gain versus Output Power
VIDEO SIGNAL
ICQ = 2 x 300 mA
Pout = 100 W
Pout = 110 W
TPV8100B
4
MOTOROLA RF DEVICE DATA
4페이지 | |||
구 성 | 총 6 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
TPV8100 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
TPV8100B | NPN SILICON RF POWER TRANSISTOR | Motorola Inc |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |