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PDF TPV8200B Data sheet ( Hoja de datos )
| Número de pieza | TPV8200B | |
| Descripción | RF POWER TRANSISTOR NPN SILICON | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
The TPV8200B is designed for output stages in band IV and V TV transmitter
amplifiers. It incorporates high value emitter ballast resistors, gold metalliza-
tions and offers a high degree of reliability and ruggedness.
Including input and output matching networks, the TPV8200B features high
impedances. It can operate over the 470 MHz to 860 MHz bandwidth using a
single fixed tuned circuit.
• To be used class AB for TV band IV and V.
• Specified 28 Volts, 860 MHz Characteristics
Output Power = 190 Watts (peak sync.)
Output Power = 150 Watts (CW)
Gain = 8 dB Min
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by TPV8200B/D
TPV8200B
Motorola Preferred Device
190 W, 470 – 860 MHz
RF POWER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Quiescent Current (without RF drive)
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
V(BR)CEO
Collector–Base Breakdown Voltage
(IC = 20 mAdc, IE = 0)
V(BR)CBO
Emitter–Base Breakdown Voltage (IE = 20 mAdc, IC = 0)
Collector–Emitter Leakage Current (VCE = 28 Vdc, RBE = 75 Ω)
V(BR)EBO
ICER
NOTE:
1. Thermal resistance is determined under specific RF condition.
Teflon is a registered trademark of du Pont de Nemours & Co., Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
Symbol
VCEO
VCBO
VEBO
IC
PD
ICQ
Tstg
Symbol
RθJC
Min
30
65
4
—
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
CASE 375A–01, STYLE 1
Value
30
65
4
20
250
1.43
2 x 500
– 65 to +150
Max
0.7
Typ Max
35 —
80 —
5—
— 15
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
mAdc
°C
Unit
°C/W
Unit
Vdc
Vdc
Vdc
mAdc
(continued)
TPV8200B
1
1 page  
TYPICAL VIDEO CHARACTERISTICS @ f = 860 MHz
VCE = 28 V
VCE = 28 V
ICQ = 2 x 75 mA
f = 860 MHz
(Channel 69)
Black Level
100
0
40
(Input Video Waveform)
200
VCE = 28 V
ICQ = 2 x 75 mA
f = 860 MHz
(Channel 69)
Black Level
27%
0%
(Input Video Waveform)
30
150 25
100
20
50
5 10 15 20
Pin, INPUT POWER (WATTS)
Figure 9. Peak Output Power versus Peak
Input Power
25
15
0
50 100 150 200
Po, OUTPUT POWER (WATTS)
Figure 10. Sync. Pulse versus Peak
Output Power
TEST CONDITIONS:
10% Rest Carrier
Channel 69
VCE = 28 V
ICQ = 2 x 75 mA
(Input Video Waveform)
Pout = 100 W
%
100
90
80
70
60
50
40
30
20
10
0
Pout = 150 W
%
100
90
80
70
60
50
40
30
20
10
0
Pout = 210 W
Figure 11. Gain versus Output Power
(Input Video Waveform)
%
100
90
80
70
60
50
40
30
20
10
0
Pout = 210 W
APL 10–90 (%)
MOTOROLA RF DEVICE DATA
TPV8200B
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TPV8200B.PDF ] | |
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