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PDF TQ5122 Data sheet ( Hoja de datos )
| Número de pieza | TQ5122 | |
| Descripción | 3V Cellular TDMA/AMPS Receiver IC With Power- Down | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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WIRELESS COMMUNICATIONS DIVISION
GND 1
16 GND
TQ5122
DATA SHEET
GND 2
Vdd MXR 3
MXR LO 4
VDD LNA 5
GND 6
RF IN 7
GND 8
15 GND
14 IF Output/Vdd
13 GND
12
MXR RF
Input
11 GND
10
LNA
Out
9
Sleep
Control
3V Cellular TDMA/AMPS
Receiver IC With Power-
Down
Features
Product Description
The TQ5122 is a 3V, RF receiver IC designed specifically for Cellular band TDMA
applications. It’s RF performance meets the requirements for products designed to the
IS-136 TDMA and the AMPS standards. The TQ5122 includes a power–down mode
which allows current saving during standby and the non-operating portion of the TDMA
pulse. The TQ5122 contains LNA and Mixer circuits matched to the 800MHz cellular
band.
Power-Down, “Sleep” Mode
Single 2.8V operation
Low-current operation
Small QSOP-16 plastic package
Few external components
The mixer uses a high-side LO frequency. The IF has a usable frequency range of 85
to 150MHz. The LNA Output and Mixer Input ports are internally matched to simplify
the design and keep the number of external components to a minimum. The TQ5122
achieves excellent RF performance with low current consumption which yields long
standby times in portable applications. The small QSOP-16 package is ideally suited
for Cellular band mobile phones.
Electrical Specifications1
Applications
IS-136 TDMA Mobile Phones
Dual Mode TDMA/AMPS Mobile Phones
AMPS Mobile Phones
Parameter
Frequency
Min Typ Max
869 894
Units
MHz
Gain 18.5 dB
Noise Figure
2.7 dB
Input 3rd Order Intercept
-8.5 dBm
DC supply Current
12.0 mA
Note 1: Test Conditions: Vdd=2.8VDC, Tc=25°C, Filter IL=2.5dB, RF=881MHz, LO=1016MHz,
IF=135MHz, LO input=-7dBm
For additional information and latest specifications, see our website: www.triquint.com
1
1 page  
TQ5122 Product Description
The TQ5122 3V RFIC Downconverter is designed specifically
for cellular band TDMA/AMPS applications. The TQ5122
contains LNA, Mixer and LO buffer circuits matched to the 800
MHz cellular frequency band. The IF frequency may be selected
between 85 and 150 MHz. Most RF ports are internally
matched to 50 Ω simplifying the design and minimizing the
number of external components. The TQ5122 also includes a
power–down mode switch which allows current saving during
standby and the non-operating portion of the TDMA pulse.
Operation
Please refer to the test circuit above.
Low Noise Amplifier (LNA)
The LNA section of the TQ5122 are cascaded common source
FET’s, see Figure 1. It is designed to operate on DC supply
voltages from 2.7V to 5V. The source terminal must be
grounded as close as possible to Pin 8 to avoid significant gain
reduction due to degeneration. The LNA requires an input
matching circuit to obtain best noise figure, gain and return loss.
The LNA output is close to 50 Ω for direct connection to a 50 Ω
image reject filter.
Vdd
LNA
in BIAS
LOAD
BIAS
LNA
out
Figure 1. Simplified Schematic of LNA Section
LNA Input Match
The designer can make some Noise Figure and Gain trade off
by varying the off chip LNA input matching circuit values and
topology. This allows the TQ5122 to be optimized for specific
system requirements.
The LNA gain, noise figure and input return loss are a function
of the source impedance (Zs), or reflection coefficient (Γs),
TQ5122
Data Sheet
presented to the input pin. Highest gain and lowest return loss
occur when Γs is equal to the complex conjugate of the LNA
input impedance. A different source reflection coefficient, Γopt,
which is experimentally determined, will provide the lowest noise
figure, Fmin.
The noise resistance, Rn, provides an indication of the sensitivity
of the noise performance to changes in Γs as seen by the LNA
input.
( )FLNA
=
FMIN
+
4 RN
Z0
⋅
1+
Γopt
Γ2
opt
− ΓS 2
⋅ 1 − Γs
2
Components such as filters and mixers placed after the LNA
degrade the overall system noise figure according to the
following equation:
FSYSTEM = FLNA + F2 − 1
GLNA
FLNA and GLNA represent the linear noise factor and gain of the
LNA and F2 is the noise factor of the next stage. The system
noise figure is a compromise between the highest gain and
minimum noise figure of the LNA. See Table 1 for noise
parameters.
Table 1. TQ5122 Noise Parameters
Freq. |Gopt| / Gopt Fmin Rn
MHz
830 0.88 34.5 0.75 51.2
880 0.83 37.8 0.89 50.4
930 0.82 40.0 0.97 50.0
LNA Output Match
The output impedance of the LNA was designed for 50Ω. The
internal 50Ω match eliminates the need for external
components at this port. It also improves IP3 performance and
power gain.
The output of the LNA is intended to be connected directly to an
image reject filter. Depending on the filter, additional
components may be needed to better match to the LNA output.
Some image reject filters may require a series inductor to
smooth the frequency response and improve overall
performance.
For additional information and latest specifications, see our website: www.triquint.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TQ5122.PDF ] | |
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