|
|
|
부품번호 | TS1220-600B 기능 |
|
|
기능 | SENSITIVE & STANDARD(12A SCRs) | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 5 페이지수
® TS1220-600B
SENSITIVE SCR
FEATURES
IT(RMS) = 12A
VDRM/VRRM = 600V
IGT < 200µA
HIGH ITSM = 110A (tp = 10ms)
DESCRIPTION
The TS1220-600B is using a high performance
TOPGLASS PNPN technology and is intended for
applications requiring high surge capability (like
power tools, crowbar protection, capacitive dis-
charge ignition...).
A
AG
K
DPAK
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
VDRM
VRRM
IT(RMS)
IT(AV)
ITSM
Parameter
Repetitive peak off-state voltage
Tj = 125°C
RGK = 220 Ω
RMS on-state current
(180° conduction angle)
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state current
(Tj initial = 25°C )
Tc= 105°C
Tc= 105°C
tp = 10 ms
tp = 8.3 ms
I2t I2t Value for fusing
tp = 10 ms
dI/dt Critical rate of rise of on-state current
IG = 10 mA dIG /dt = 0.1 A/µs.
Tstg Storage junction temperature range
Tj Operating junction temperature range
T Maximum temperature for soldering during 10s
Value
600
12
8
110
115
40
50
- 40 to + 150
- 40 to + 125
260
Unit
V
A
A
A
A2s
A/µs
°C
°C
May 1998 - Ed: A3
1/5
TS1220-600B
Fig 5: Relative variation of gate trigger current and
holding current versus junction temperature.
IGT,IH[Tj]/IGT,IH[Tj=25°C]
2.0
1.8
IGT
1.6
1.4
1.2
1.0 IH
0.8
0.6
0.4
0.2 Tj(°C)
0.0
-40 -20 0 20 40 60
80 100 120 140
Fig 6: Relative variation of holding current versus
gate-cathode resistance (typical values).
IH[RGK] / IH [RGK=1kΩ]
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E+1
RGK(Ω)
1E+2
1E+3
Tj=25°C
1E+4
Fig 7: Non repetitive surge peak on-state current
versus number of cycles.
ITSM(A)
120
110
100
90
80
70
60
50
40
30
20
10
0
1
Tj initial=25°C
F=50Hz
Number of cycles
10 100
1000
Fig 8: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I2t.
ITSM(A),I²t(A²s)
500
ITSM
Tj initial=25°C
100
I²t
tp(ms)
10
12
5 10
Fig 9: On-state characteristics (maximum values).
ITM(A)
100.0
Tj max.:
Vto=0.85V
Rt=31m Ω
10.0 Tj=Tj max.
1.0
Tj=25°C
VTM(V)
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Fig 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35µm).
Rth(j-a) (°C/W)
100
80
60
40
20
S(Cu) (cm²)
0
0 2 4 6 8 10 12 14 16 18 20
4/5
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ TS1220-600B.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
TS1220-600B | SENSITIVE SCR | STMicroelectronics |
TS1220-600B | SENSITIVE & STANDARD(12A SCRs) | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |