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부품번호 | TS420-600T-TR 기능 |
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기능 | 4A SCRs | ||
제조업체 | STMicroelectronics | ||
로고 | |||
®
SENSITIVE
TS420 Series
4A SCRs
MAIN FEATURES:
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
4
600 and 700
200
Unit
A
V
µA
DESCRIPTION
Thanks to highly sensitive triggering levels, the
TS420 series is suitable for all applications where
the available gate current is limited, such as motor
control for hand tools, kitchen aids, overvoltage
crowbar protection for low power supplies, ...
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
A
A
KA
G
DPAK
(TS420-B)
G
K
A
KA
G
IPAK
A (TS420-H)
K
AG
TO-220AB
(TS420-T)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
IT(AV)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
Parameter
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state
current
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
Tl = 115°C
Tl = 115°C
Tj = 25°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 125°C
Value
4
2.5
33
30
4.5
50
1.2
0.2
- 40 to + 150
- 40 to + 125
Unit
A
A
A
A2S
A/µs
A
W
°C
September 2000 - Ed: 3
1/8
TS420 Series
Fig. 4: Relative variation of gate trigger current
and holding current versus junction temperature.
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C]
2.0
1.8 IGT
1.6
1.4
1.2
1.0
IH & IL
Rgk = 1k Ω
0.8
0.6
0.4
0.2 Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120 140
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
IH[Rgk] / IH[Rgk = 1kΩ]
Rgk(kΩ)
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
dV/dt[Rgk] / dV/dt [Rgk = 220Ω]
10.00
Tj=125°C
VD=0.67xVDRM
1.00
0.10
0.01
0
Rgk(Ω)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Fig. 8: Surge peak on-state current versus
number of cycles.
ITSM(A)
35
30
25
Non repetitiv e
Tj initial = 25 °C
20
15
Repetitiv e
10 Tcase = 115 °C
5
Number of cycles
0
1 10
tp = 10ms
One cycle
100 1000
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
dV/dt[Cgk] / dV/dt [Rgk = 220 Ω]
10
VD = 0.67 x VDRM
Tj = 125°C
Rgk = 220 Ω
8
6
4
2
Cgk(nF)
0
0 2 4 6 8 10 12 14 16 18 20 22
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t.
ITSM(A),I 2t(A2s)
300
100
dI/dt
limitattion
Tj initial = 25 °C
ITSM
10
1
0.01
tp(ms)
0.10 1.00
I2t
10.00
4/8
4페이지 TS420 Series
PACKAGE MECHANICAL DATA
IPAK (Plastic)
E
B2
L2
H
L
L1
B6
B3
B
V1
B5
G
A
C2
D
A1
C
A3
DIMENSIONS
REF.
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 2.2
2.4 0.086
0.094
A1 0.9
1.1 0.035
0.043
A3 0.7
1.3 0.027
0.051
B 0.64
0.9 0.025
0.035
B2 5.2
5.4 0.204
0.212
B3 0.85 0.033
B5 0.3
0.035
B6 0.95 0.037
C 0.45
0.6 0.017
0.023
C2 0.48
0.6 0.019
0.023
D6
6.2 0.236
0.244
E 6.4
6.6 0.252
0.260
G 4.4
4.6 0.173
0.181
H 15.9
16.3 0.626
0.641
L9
9.4 0.354
0.370
L1 0.8
1.2 0.031
0.047
L2
0.8 1
0.031 0.039
V1 10°
10°
7/8
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ TS420-600T-TR.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
TS420-600T-TR | 4A SCRs | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |