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PDF TS7990 Data sheet ( Hoja de datos )
| Número de pieza | TS7990 | |
| Descripción | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TS7990 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Ordering number :EN5960
NPN Triple Diffused Planar Silicon Transistor
TS7990
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
• High speed.
• High breakdown voltage (VCBO=1600V).
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
Package Dimensions
unit:mm
2039D-TO3PML
[TS7990]
16.0
ø3.4
5.6
3.1
2.8
2.0 2.0
1.0
0.6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Colletctor-to-Base Voltage
Colletctor-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚ C
Electrical Characteristics at Ta = 25˚C
123
5.45 5.45
1:Base
2:Collector
3:Emitter
SANYO:TO-3PML
Conditions
Ratings
1600
800
6
15
35
3.0
75
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Parameter
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
C-E Saturation Voltage
B-E Saturation Voltage
Storage Time
Fall Time
Symbol
Conditions
ICES
VCEO(SUS)
IEBO
ICBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
tstg
tf
VCE=1600V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
VCB=800V, IE=0
VCE=5V, IC=1.0A
VCE=5V, IC=11A
IC=11A, IB=2.75A
IC=11A, IB=2.75A
IC=9A, IB1=1.5A, IB2=–3.75A
IC=9A, IB1=1.5A, IB2=–3.75A
Ratings
min typ
800
15
4
max
1.0
1.0
10
30
7
5
1.5
3.0
0.2
Unit
mA
V
mA
µA
V
V
µs
µs
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42498TS (KOTO) TA-1621 No.5960-1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet TS7990.PDF ] | |
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