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PDF TLE4205 Data sheet ( Hoja de datos )

Número de pieza TLE4205
Descripción 1-A DC Motor Driver
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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Total 13 Páginas

No Preview Available ! TLE4205 Hoja de datos, Descripción, Manual

1-A DC Motor Driver
Overview
Features
q Max. driver current 1 A
q Integrated free-wheeling diodes
q Short-circuit proof to ground
q Inhibit
q ESD protected inputs
q Temperature range – 40 °C Tj 150 °C
TLE 4205
Bipolar IC
P-DIP-18-3
P-DSO-20-6
Type
TLE 4205
TLE 4205 G
Ordering Code
Q67000-A9025
Q67006-A9114
Package
P-DIP-18-3
P-DSO-20-6
Description
TLE 4205 is an integrated power full-bridge DC-motor driver for a wide temperature
range, as required in automotive applications for example. The circuit contains two
power comparators that can be combined to a full-bridge circuit. For inductive loads
there are integrated free-wheeling diodes to + VS and ground. The outputs are short-
circuit proof up to 18 V supply voltage to ground and turn off when overtemperature
occurs. This IC is especially suitable for headlight-beam adjustment in automobiles.
Semiconductor Group
1
1998-02-01

1 page




TLE4205 pdf
TLE 4205
+ Ι1 7
(10)
- Ι1 8
(11)
+
-
VS
2 (20)
T1
T2
1 Q1
(19)
INH 9
(12)
Power Limiting
for T1, T3
Temperature
Protection
+Ι2 6
(9)
-Ι2 5
(8)
+
-
T3
3 Q2
(1)
T4
(4-7)
4, 10-18 (14-17)
GND
Figure 2 Block Diagram
AEB00637
Semiconductor Group
5
1998-02-01

5 Page





TLE4205 arduino
TLE 4205
Forward Voltage of the
Free-Wheeling Diodes versus
Junction Temperature
1.6
V
1.4
VF
1.2
1.0
IED00955
Ι F= 0.6 A
VFU
VFL
0.8
0.6
0.4
0.2
0
-40 0 40 80 ˚C 120
TJ
Saturation Voltage versus
Junction Temperature
1.6
V
1.4
V Sat
1.2
IED00957
I Q = 600 mA
VS = 13.5 V
VSat U
1.0
VSat L
0.8
0.6
0.4
0.2
0
-40 0 40 80 ˚C 120
TJ
Start Point of the SOA-
Protection Circuit versus
Junction Temperature
2.4
A
I 2.0
IED00956
1.6
VS = 13.5 V
1.2
0.8
0.4
0
-40 0
40 80 ˚C 120
TJ
Current Consumption versus
Junction Temperature
18
mA
16
IS
14
12
IED00958
VS = 13.5 V
10
8
6
4
2
0
-40 0 40 80 ˚C 120
TJ
Semiconductor Group
11
1998-02-01

11 Page







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