Datasheet.kr   

TLP181 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 TLP181
기능 GaAs IRED & PHOTO-TRANSISTOR
제조업체 Toshiba Semiconductor
로고 Toshiba Semiconductor 로고 


전체 9 페이지

		

No Preview Available !

TLP181 데이터시트, 핀배열, 회로
TOSHIBA Photocoupler GaAs Ired & PhotoTransistor
TLP181
Office Machine
Programmable Controllers
AC / DCInput Module
Telecommunication
TLP181
Unit in mm
www.DataSheetTs4uUhie.tcaoTbmOleSfHorIBsuArmfaicneimfloaut ncotuapslseermTbLlyP. 181 is a small outline coupler,
TLP181 consist of a photo transistor optically coupled to a gallium
arsenide infrared emitting diode.
Collectoremitter voltage: 80V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
Isolation voltage: 3750Vrms (min.)
UL recognized: UL1577,
file no. E67349
Option (V4) type
VDE approved: EN 60747-5-2 satisfied
Maximum operating insulation voltage: 565VPK
Highest permissible over voltage: 6000VPK
BSI approved: BS EN60065:2002, certificate no.8285
BS EN60950-1:2002, certificate no.8286
TOSHIBA
Weight: 0.09 g
114C1
Pin Configuration (top view)
1
3
1: Anode
3: Cathode
4: Emitter
6: Collector
6
4
1 2007-10-01




TLP181 pdf, 반도체, 판매, 대치품
Individual Electrical Characteristics (Ta = 25°C)
TLP181
Characteristic
Forward voltage
Reverse current
Capacitance
Collectoremitter
breakdown voltage
Emittercollector
breakdown voltage
www.DataSheet4U.com Collector dark current
Capacitance
(collector to emitter)
Symbol
Test Condition
VF IF = 10 mA
IR VR = 5 V
CT V = 0, f = 1 MHz
V(BR) CEO IC = 0.5 mA
Min. Typ. Max. Unit
1.0 1.15 1.3
— — 10
— 30 —
V
μA
pF
80 — —
V
V(BR) ECO IE = 0.1 mA
7 —— V
ICEO
VCE = 48 V, ( Ambient light
below 1000 lx)
VCE = 48 V, Ta = 85°C, ( Ambient
light below 1000 lx)
0.01 0.1
(2) (10)
μA
2
(4)
50
(50)
μA
CCE
V = 0, f = 1 MHz
— 10 — pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Collectoremitter
saturation voltage
Offstate collector current
Symbol
Test Condition
IC / IF
IF = 5 mA, VCE = 5 V
Rank GB
IC / IF (sat)
IF = 1 mA, VCE = 0.4 V
Rank GB
VCE (sat)
IC = 2.4 mA, IF = 8 mA
IC = 0.2 mA, IF = 1 mA
Rank GB
IC (off)
VF = 0.7V, VCE = 48 V
MIn. Typ. Max. Unit
50 — 600
%
100 — 600
— 60 —
%
30 — —
— — 0.4
— 0.2 —
V
— — 0.4
— 1 10 μA
Isolation Characteristics (Ta = 25°C)
Characteristic
Capacitance
(input to output)
Isolation resistance
Isolation voltage
Symbol
Test Condition
CS VS = 0V, f = 1 MHz
RS VS = 500 V, R.H. 60%
AC, 1 minute
BVS AC, 1 second, in oil
DC, 1 minute, in oil
Min. Typ. Max. Unit
— 0.8
1×1012 1014
3750 —
— 10000
— 10000
pF
Vrms
Vdc
4 2007-10-01

4페이지










TLP181 전자부품, 판매, 대치품
50
40
30
20
10
www.DataSheet4U.com
IC – VCE
50mA
30mA
20mA
15mA
Ta = 25°C
10mA
PC (MAX.)
IF = 5mA
00 2 4
6 8 10
Collector-emitter voltage VCE (V)
TLP181
30
Ta = 25°C
IC – VCE
20
50mA
40mA
30mA
20mA
10mA
10 5mA
2mA
00 0.2 0.4 0.6 0.8 1.0
Collector-emitter voltage VCE (V)
Ta = 25°C
100
50
30
IC – IF
10
5
3
1
0.5
0.3
0.1
0.1
Sample A
Sample B
0.3 0.5 1
3 5 10
VCE = 10V
VCE = 5V
VCE = 0.4V
30 50
Forward current IF (mA)
1000
Ta = 25°C
500
300
Sample A
IC / IF – IF
100
50
30
10
0.1
Sample B
VCE = 10V
VCE = 5V
VCE = 0.4V
0.3 0.5 1
3 5 10
30 50
Forward current IF (mA)
ICEO – Ta
101
100
101
102
103
VCE = 48V
24V
10V
5V
104
0
20 40 60 80 100
Ambient temperature Ta (°C)
7 2007-10-01

7페이지



구       성총 9 페이지
다운로드[ TLP181.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
TLP180

TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR

Toshiba Semiconductor
Toshiba Semiconductor
TLP181

GaAs IRED & PHOTO-TRANSISTOR

Toshiba Semiconductor
Toshiba Semiconductor

추천 데이터시트

부품번호상세설명 및 기능제조사
CQ1565RT

FSCQ1565RT, Green Mode Fairchild Power Switch. In general, a Quasi-Resonant Converter (QRC) shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a fixed switching frequency.

Fairchild
Fairchild
KF16N25D

MOSFET의 기능은 N Channel MOS Field effect transistor입니다. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies.( Vdss=250V, Id=13A )

KEC
KEC

DataSheet.kr    |   2018   |  연락처   |  링크모음   |   검색  |   사이트맵