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PDF TLP251 Data sheet ( Hoja de datos )

Número de pieza TLP251
Descripción GaAlAs Ired & Photo-IC
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! TLP251 Hoja de datos, Descripción, Manual

TOSHIBA Photocoupler GaAAs Ired & Photo-IC
TLP251
Inverter For Air Conditioner
Induction Heating
Transistor Inverter
Power MOS FET Gate Drive
IGBT Gate Drive
TLP251
Unit in mm
The TOSHIBA TLP251 consists of a GaAAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP251 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP251 is capable of “direct” gate drive of lower power IGBTs.
(~15A)
z Input threshold current: IF=5mA(max.)
z Supply current (ICC): 11mA(max.)
z Supply voltage (VCC): 1035V
z Output current (IO): ±0.4A(max.)
z Switching time (tpLH / tpHL): 1μs(max.)
z Isolation voltage: 2500Vrms(min.)
z UL recognized: UL1577, file no.E67349
z Option(D4)
VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 890VPK
Highest Permissible Over Voltage
: 4000VPK
(Note):When a EN60747-5-2 approved type is needed,
Please designate “Option(D4)”
TOSHIBA
1110C4
Weight: 0.54 g (typ.)
Pin Configuration (top view)
18
27
36
Truth Table
Input
LED
On
Off
Tr1
On
Off
Tr2
Off
On
45
1 : N.C. 5 : GND
2 : Anode 6 : VO (Output)
3 : Cathode 7 : N.C.
4 : N.C.
8 : VCC
Schematic
ICC
VCC
8
IF
2
(Tr 1)
VF
3
6
VO
IO
(Tr 2)
GND
5
A 0.1μF bypass capcitor must be connected
between pin 8 and 5(see Note 5).
1 2007-10-01

1 page




TLP251 pdf
Test Circuit 5: tpLH, tpHL, tr, tf
8
IF
0.1μF
VCC1
VO
RL
100
VEE1
TLP251
IF tr
tf
VOH 80%
VO GND
tpLH
tpHL
VOL 80%
Test Circuit 6: CMH, CML
SW IF
1
AB
4
VCM
+-
8
0.1μF
VO
VCC
VCM
10%
90%
600V
tr tf
SW: A(IF = 8mA)
VO 3V
SW: B(IF = 0)
26V
CMH
CHL
CML
=
480(V)
tr (μs)
CMH
=
480(V)
tf (μs)
CML (CMH) is the maximum rate of rise (fall) of the common mode voltage that can be
sustained with the output voltage in the low (high) state.
5 2007-10-01

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