(PDF) TLP251F Datasheet - GaAlAs Ired & Photo−IC

Número de pieza	TLP251F
Descripción	GaAlAs Ired & Photo−IC
Fabricantes	Toshiba Semiconductor
Logotipo
Hay una vista previa y un enlace de descarga de TLP251F (archivo pdf) en la parte inferior de esta página. Total 3 Páginas
No Preview Available ! TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC TLP251F Inverter For Air Conditionor Induction Heating Transistor Inverter Power MOS FET Gate Drive IGBT Gate Drive TLP251F Unit in mm The TOSHIBA TLP251F consists of a GaAℓAs light emitting diode and a integrated photodetector. This unit is 8−lead DIP package. TLP251F is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP251 is capable of “direct” gate drive of lower power IGBTs. (~15A) · Input threshold current: IF = 5mA (max.) · Supply current: 11mA (max.) · Supply voltage: 10~35V · Output peak current: ±0.4A (max.) · Switching time: tpHL, tpLH = 1µs (max.) · Isolation voltage: 2500Vrms(min.) · UL recognized: UL1577, file no. E67349 · Option (D4) type VDE approved: DIN VDE0884 / 06.92, certificate no. 87447 Maximum operating insulation voltage: 1140VPK Highest permissible over voltage: 6000VPK (Note 1) When a VDE0884 approved type is needed, please designate the “ Option (D4) ” · Structural parameter Creepage distance: 8.0mm (min.) Clearance: 8.0mm (min.) TOSHIBA 11−10C402 Weight: 0.54g 1 2002-09-25 1 page

Páginas	Total 3 Páginas
PDF Descargar	[ Datasheet TLP251F.PDF ]

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

PDF TLP251F Data sheet ( Hoja de datos )