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부품번호 | TLP270M 기능 |
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기능 | TRIPOLAR OVERVOLTAGE PROTECTION for TELECOM LINE | ||
제조업체 | STMicroelectronics | ||
로고 | |||
®
Application Specific Discretes
A.S.D.™
TLPxxM/G/G-1
TRIPOLAR OVERVOLTAGE
PROTECTION for TELECOM LINE
MAIN APPLICATIONS
Any sensitive telecom equipment requiring protec-
tion against lightning :
Analog and ISDN line cards
Main Distribution Frames
Terminal and transmission equipment
Gas-tube replacement
GND
TIP
TIP
TIP
TIP
TIP
PowerSO-10TM TLPxxM
RING
RING
RING
RING
RING
DESCRIPTION
The TLPxxM/G/G-1 series are tripolar transient
surge arrestors used for primary and secondary
protectionin sensitive telecom equipment.
FEATURES
TRIPOLAR CROWBAR PROTECTION
VOLTAGE RANGE SELECTED FOR
TELECOM APPLICATIONS
REPETITIVE PEAK PULSE CURRENT :
IPP = 100 A (10 / 1000 µs)
HOLDING CURRENT : IH = 150 mA
LOW CAPACITANCE : C = 110 pF typ.
LOW LEAKAGE CURRENT : IR = 5 µA max
BENEFITS
No ageing and no noise.
If destroyed, the TLPxxM/G/G-1 falls into short
circuit, still ensuring protection.
Access to Surface Mount applications thanks to
the PowerSO-10TM and D2PAK package.
GND
TAB
GND
TIP
D2PAK TLPxxG
RING
GND
TAB
TIP GND RING
I2PAK TLPxxG-1
TM: ASD and PowerSO-10 are trademarks of ST Microelectronics.
September 1998 - Ed : 3C
1/14
TLPxxM/G/G-1
THERMAL RESISTANCE
Symbol
Rth (j-c)
Junction to case
Parameter
Rth (j-a) Junction to ambient
TLPxxM
TLPxxG
TLPxxG-1
TLPxxM
TLPxxG
TLPxxG-1
Value
1.0
1.0
1.0
see table page 14
see table page 14
see table page 14
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS BETWEEN TIP AND RING (Tamb = 25°C)
Type
IRM @ VRM
max.
IR @ VR
max.
TLP140M/G/G-1
µA
5
TLP200M/G/G-1
5
TLP270M/G/G-1
5
Note : VR = 50 V bias, VRMS = 1V, F = 1 MHz.
V
120
180
230
µA
50
50
50
V
140
200
270
C
typ.
note
pF
35
35
35
ELECTRICAL CHARACTERISTICS BETWEEN TIP AND GND, RING AND GND (Tamb = 25°C)
Type
IRM @ VRM
max.
IR @ VR
max.
VBO @
IBO
max. max.
IH
min.
C @ VR
typ.
note 1
µA V µA V
TLP140M/G/G-1 5
120 50 140
TLP200M/G/G-1 5
180 50 200
TLP270M/G/G-1 5
230 50 270
Note 1: IR measured at VR guarantees VBR min > VR.
Note 2: Measured at 50 Hz.
Note 3: See functional holding current test circuit.
Note 4: VR = 0V bias, VRMS = 1V, F = 1 MHz.
Note 5: VR = 50V bias, VRMS = 1V, F = 1 MHz (TIP or RING (-) / GND (+)).
note 2
V
200
290
400
mA
500
500
500
note 3
mA
150
150
150
note 4
pF
110
110
110
note 5
pF
40
40
40
4/14
4페이지 Fig. 5-1 : Breakover voltage measurement
(TLP140M/G/G-1).
TLPxxM/G/G-1
Fig. 5-2 : Breakover voltage measurement
(TLP200M/G/G-1).
Vbr/Vbr
2.6
2.6 Vbo/Vbr
2.4 2.4
2.2 TIP RING
2.2 TIP RING
22
1.8 1.8
1.6 1.6
1.4 1.4
1.2
TIP+ GND -
1.2
TIP+ GND -
1 TIP- GND +
0.01
0.1
1
10 100 1,000 10,000 100,000
TIP- GND +
1
0.01
0.1
1
10 100 1,000 10,000 100,000
dV/dt
dV/dt
Fig. 5-3 : Breakover voltage measurement
(TLP270M/G/G-1).
Vbo/Vbr
2.6
2.4
2.2 TIP RING
2
1.8
1.6
1.4
TIP+ GND -
1.2
TIP- GND +
1
0.01
0.1
1
10 100 1,000 10,000 100,000
dV/dt
7/14
7페이지 | |||
구 성 | 총 14 페이지수 | ||
다운로드 | [ TLP270M.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |