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PDF TLP4172G Data sheet ( Hoja de datos )
| Número de pieza | TLP4172G | |
| Descripción | Photocoupler Photorelay | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Photocoupler Photorelay
TLP4172G
TLP4172G
Telecommunication
Measurement Equipment
Security Equipment
FA
The Toshiba TLP4172G consists of an aluminum gallium arsenide
infrared emitting diode optically coupled to a photo-MOSFET in a SOP
package. This 1-form-B (NC) photorelay features a withstanding voltage
of 350 V.
• 4-pin SOP (2.54SOP4): Height = 2.1 mm, pitch = 2.54 mm
• Normally closed (1-form-B) device
• Peak off-state voltage: 350 V (min)
• Trigger LED current: 3 mA (max)
• On-state current: 90 mA (max)
• On-state resistance: 50 Ω (max)
• Isolation voltage: 1500 Vrms (min)
• UL Recognized: UL1577, File No. E67349
Pin Configuration (top view)
14
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
11-5H1
Weight: 0.1 g (typ.)
2
1: Anode
2: Cathode
3: Drain
4: Drain
3
1 2004-07-26
1 page  
50
ION = 90 mA
t<1s
40
RON – Ta
30
20
10
0
−40 −20 0 20 40 60 80 100
Ambient temperature Ta (°C)
TLP4172G
5
ION = 90 mA
t<1s
4
IFC – Ta
3
2
1
0
−40 −20
0
20 40 60 80
Ambient temperature Ta (°C)
100
1000
VOFF = 350 V
300 IF = 5 mA
100
IOFF – Ta
30
10
3
1
0 20 40 60 80
Ambient temperature Ta (°C)
100
150
Ta = 25°C
100
ION – VON
50
0
−50
−100
−150
−4 −3
−2 −1
0
1
2
34
On-state voltage VON (V)
3000
1000
300
100
30
10
1
tON, tOFF – IF
Ta = 25°C
VDD = 20 V, RL = 200 Ω
tON
tOFF
3 5 10
30 50 100
Input current IF (mA)
300
tON, tOFF – Ta
3000
VDD = 20 V, RL = 200 Ω
IF = 5 mA
1000
tOFF
300
tON
100
30
10
−40
−20 0
20 40 60 80
Ambient temperature Ta (°C)
100
5 2004-07-26
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TLP4172G.PDF ] | |
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