(PDF) TLP722 Datasheet - Photocoupler Photo−Diode

Número de pieza	TLP722
Descripción	Photocoupler Photo−Diode
Fabricantes	Toshiba Semiconductor
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No Preview Available ! TENTATIVE TOSHIBA Photocoupler Photo−Diode TLP722 TLP722 The TOSHIBA TLP722 consists of a photo−diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4). TLP722: Single circuit · Cathode−anode voltage: 30V (max) · Current transfer ratio: 0.1% (min) · Input / output isolation voltage: 4000Vrms (min) · Operating temperature range: −55~100°C · Storage temperature range: −55~125°C · UL recognized: UL1577, E67349 · VDE approved: VDE0884 Maximum operating insulation voltage: 890VPK Maximum permissible over voltage: 8000VPK (Note): When a VDE0884 approved type is needed, please designate the “ Option (D4) ” · SEMKO approved product: SS EN60950, approved No. 9808324 / 01 · Construction mechanical rating Creepage distance Clearance Insulation thickness TLP722 type 7.0 mm 7.0 mm 0.4 mm TLP722F type 8.0 mm 8.0 mm 0.4 mm Unit in mm TOSHIBA Weight: 0.28 g 11−5B2 Pin Configuration (top view) 1 2002-09-25 1 page

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PDF TLP722 Data sheet ( Hoja de datos )